PBSS4320T T/R NXP Semiconductors, PBSS4320T T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS4320T T/R
• Description: Transistors Bipolar - BJT NPN 20V 2A
• Manufacturer: NXP Semiconductors

Specifications of PBSS4320T T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 20 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4320T,215

NXP Semiconductors
2004 Mar 18
handbook, halfpage
handbook, halfpage
20 V NPN low V
V CEsat
V CEsat
I
(1) T
(2) T
(3) T
Fig.6
I
(1) T
(2) T
(3) T
Fig.8
(mV)
C
C
(mV)
/I
/I
B
B
10
10
10
10
= 10.
= 50.
10
10
amb
amb
amb
amb
amb
amb
10
10
1
1
3
2
3
2
1
= 150 °C.
= 25 °C.
= −55 °C.
1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
(1)
(3)
CEsat
10
10
(3)
(1)
2
2
(2)
transistor
10
10
3
3
I C (mA)
(2)
I C (mA)
MLD853
MLD855
10
10
4
4
6
handbook, halfpage
handbook, halfpage
V CEsat
V CEsat
I
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
(mV)
C
(mV)
C
/I
/I
B
B
10
10
10
10
= 20.
= 100.
10
10
amb
amb
amb
amb
amb
amb
10
10
1
1
3
2
3
2
1
1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
10
10
2
(1)
(3)
2
PBSS4320T
(2)
Product data sheet
10
10
(1)
(3)
3
I C (mA)
3
I C (mA)
MLD854
MLD856
(2)
10
10
4
4