PBSS3515VS T/R NXP Semiconductors, PBSS3515VS T/R Datasheet

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PBSS3515VS T/R

Manufacturer Part Number
PBSS3515VS T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515VS T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
15 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
280 MHz
Dc Collector/base Gain Hfe Min
200 at 10 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Continuous Collector Current
0.5 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS3515VS,115
Product data sheet
Supersedes data of 2001 Nov 07
DATA SHEET
PBSS3515VS
15 V low V
transistor
DISCRETE SEMICONDUCTORS
CE(sat)
M3D744
PNP double
2004 Dec 23

Related parts for PBSS3515VS T/R

PBSS3515VS T/R Summary of contents

Page 1

DATA SHEET PBSS3515VS 15 V low V transistor Product data sheet Supersedes data of 2001 Nov 07 DISCRETE SEMICONDUCTORS M3D744 PNP double CE(sat) 2004 Dec 23 ...

Page 2

... NXP Semiconductors 15 V low V PNP double transistor CE(sat) FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • ...

Page 3

... NXP Semiconductors 15 V low V PNP double transistor CE(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor unless otherwise specified V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current ...

Page 4

... NXP Semiconductors 15 V low V PNP double transistor CE(sat) CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors 15 V low V PNP double transistor CE(sat) 600 handbook, halfpage h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors 15 V low V PNP double transistor CE(sat handbook, halfpage R CEsat (Ω −1 10 −1 −10 −1 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Equivalent on-resistance as a function of collector current; typical values. ...

Page 7

... NXP Semiconductors 15 V low V PNP double transistor CE(sat) PACKAGE OUTLINE Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Dec ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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