PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS3515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 280 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS3515M,315

NXP Semiconductors
2003 Jul 22
handbook, halfpage
handbook, halfpage
15 V, 0.5 A
PNP low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
−10
−10
B
600
400
200
−10
= −2 V.
= 20.
−1
−10
−10
amb
amb
amb
amb
amb
amb
0
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
CEsat
(1)
(2)
(3)
(BISS) transistor
−10
−10
(2)
(3)
(1)
−10
−10
2
2
I C (mA)
I C (mA)
MLD669
MLD665
−10
−10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
−1200
−1000
−1200
−1000
CE
(mV)
/I
V BE
−800
−600
−400
−200
−800
−600
−400
−200
B
= −2 V.
= 20.
amb
amb
amb
amb
amb
amb
−10
−10
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
−1
−1
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
PBSS3515M
−10
−10
Product data sheet
2
2
I C (mA)
I C (mA)
MLD667
MLD668
−10
−10
3
3