MT45W4MW16BCGB-701 IT Micron Technology Inc, MT45W4MW16BCGB-701 IT Datasheet - Page 35

• Manufacturer Part Number: MT45W4MW16BCGB-701 IT
• Description: IC PSRAM 64MB 54-VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 IT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q3816748

Table 11:
Table 12:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Description
Operating Current
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Asynchronous random READ/WRITE
Asynchronous page READ
Initial access, burst READ/WRITE
Continuous burst READ
Continuous burst WRITE
Standby current
Electrical Characteristics
Wireless temperature (–30ºC < T
Operating Conditions
Wireless temperature (–30ºC < T
Notes:
Notes:
1. V
2. Input signals may overshoot to V
3. Input signals may undershoot to V
4. BCR[5:4] = 01b (default setting of one-half drive strength).
1. This parameter is specified with the outputs disabled to avoid external loading effects.
2. Micron devices are fully compatible with the CellularRAM Workgroup specification for
3. I
4. I
The user must add the current required to drive output capacitance expected in the actual
system.
I
standby current, all inputs must be driven either to V
for up to 500ms after power-up or when entering standby mode.
characterization and is not 100 percent tested.
CC
SB
SB
CC
P1: –70 MAX of 18mA.
(MAX) values are measured with PAR set to full array and at +85°C. To achieve low
(TYP) is the average I
V
Q (MAX) exceeds the CellularRAM Workgroup specification of 1.95V.
I
I
chip disabled
IN
OE# = V
Conditions
OH
OL
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
= 0 to V
V
V
= +0.2mA
= –0.2mA
IN
IN
chip enabled,
Conditions
CE# = V
= V
= V
I
IH
OUT
CC
C
C
CC
CC
or
< +85ºC); Industrial temperature (–40ºC < T
< +85ºC); Industrial temperature (–40ºC < T
Q or 0V
Q or 0V
= 0
Q
CC
Q
V
V
V
V
V
V
I
CC
I
LO
OH
CC
OL
LI
IH
IL
SB
Q
I
I
I
CC
at 25°C, and V
CC
I
CC
I
CC
CC
I
Symbol
SB
3W
35
3R
1P
1
2
CC
Symbol
Low power (L)
SS
Q + 1.0V for periods less than 2ns during transitions.
Standard
- 1.0V for periods less than 2ns during transitions.
133 MHz
104 MHz
133 MHz
104 MHz
133 MHz
104 MHz
80 MHz
80 MHz
80 MHz
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–70
–70
CC
= V
V
CC
0.8 V
CC
Q = 1.8V. This parameter is verified during
Min
–0.2
1.7
1.7
Q - 0.4
–
–
–
Typ
CC
50
CC
Q
Q or V
Electrical Characteristics
C
C
V
< +85ºC)
< +85ºC)
0.2 V
SS
CC
Max
Max
140
120
. I
1.95
Q + 0.2
25
15
45
35
30
40
30
25
40
35
30
©2005 Micron Technology, Inc. All rights reserved.
3.3
0.4
SB
–
1
1
CC
might be slightly higher
Q
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
Notes
Notes
1, 2
3, 4
1
1
1
1
1
2
3
4
4