IS42S32400B-7BI ISSI, Integrated Silicon Solution Inc, IS42S32400B-7BI Datasheet - Page 5

• Manufacturer Part Number: IS42S32400B-7BI
• Description: IC SDRAM 128MBIT 143MHZ 90FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32400B-7BI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PIN FUNCTIONS
DQM0-DQM3
DQ0-DQ31
IS42S32400B
Integrated Silicon Solution, Inc. — www.issi.com —
PRELIMINARY INFORMATION Rev. 00J
03/03/09
BA0, BA1
Symbol
A0-A11
CAS
CKE
CLK
RAS
V
V
WE
V
V
CS
DDQ
SSQ
DD
SS
Input/Output Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Type
Function (In Detail)
Address Inputs: A0-A11 are sampled during the ACTIVE
command (row-address A0-A11) and READ/WRITE command (column address A0-
A7), with A10 defining auto precharge) to select one location out of the memory array in
the respective bank. A10 is sampled during a PRECHARGE command to determine if
all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE
REGISTER command.
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
CAS, in conjunction with the RAS and WE, forms the device command. See the
"Command Truth Table" for details on device commands.
The CKE input determines whether the CLK input is enabled. The next rising edge of the
CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW,
the device will be in either power-down mode, clock suspend mode, or self refresh
mode. CKE is an asynchronous input.
CLK is the master clock input for this device. Except for CKE, all inputs to this device
are acquired in synchronization with the rising edge of this pin.
The CS input determines whether command input is enabled within the device.
Command input is enabled when CS is LOW, and disabled with CS is HIGH. The device
remains in the previous state when CS is HIGH.
DQM0 - DQM3 control the four bytes of the I/O buffers (DQ0-DQ31). In read
mode, DQMn control the output buffer. When DQMn is LOW, the corresponding buffer
byte is enabled, and when HIGH, disabled. The outputs go to the HIGH impedance
state whenDQMn is HIGH. This function corresponds to OE in conventional DRAMs. In
write mode, DQMn control the input buffer. When DQMn is LOW, the corresponding
buffer byte is enabled, and data can be written to the device. When DQMn is HIGH,
input data is masked and cannot be written to the device.
Data on the Data Bus is latched on these pins during Write commands, and buffered
after Read commands.
RAS, in conjunction with CAS and WE, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE, in conjunction with RAS and CAS, forms the device command. See the "Command
Truth Table" item for details on device commands.
V
V
V
V
DDQ
DD
SSQ
SS
is the device internal ground.
is the device internal power supply.
is the output buffer ground.
is the output buffer power supply.
1-800-379-4774
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