MT46V128M4BN-5B:F Micron Technology Inc, MT46V128M4BN-5B:F Datasheet - Page 49

• Manufacturer Part Number: MT46V128M4BN-5B:F
• Description: IC DDR SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M4BN-5B:F

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Organization: 128Mx4
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

READ
Figure 18:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
READ Command
Note:
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 18 on page 49. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A0–Ai (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
A10
EN AP = enable auto precharge; DIS AP = disable auto precharge.
CK
HIGH
DIS AP
EN AP
Bank
Col
Don’t Care
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands