MT46V128M4BN-5B:F Micron Technology Inc, MT46V128M4BN-5B:F Datasheet - Page 66

• Manufacturer Part Number: MT46V128M4BN-5B:F
• Description: IC DDR SDRAM 512MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M4BN-5B:F

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-FBGA
• Organization: 128Mx4
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 195mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 31:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
Terminating a READ Burst
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
Bank a,
Bank a,
READ
READ
READ
Col n
Col n
Col n
T0
T0
T0
1. Page remains open.
2. DO n = data-out from column n.
3. BL = 4.
4. Subsequent element of data-out appears in the programmed order following DO n.
5. Shown with nominal
CL = 2
BST 1
BST 1
BST 1
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
66
DO
n
T2n
T2n
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
T3
NOP
t
DQSQ.
DO
n
T3n
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T4
T4
T4
NOP
NOP
NOP
©2000 Micron Technology, Inc. All rights reserved.
T5
T5
T5
NOP
NOP
NOP
Don’t Care
Operations