IS61LF12836A-7.5B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LF12836A-7.5B2I-TR Datasheet - Page 12

• Manufacturer Part Number: IS61LF12836A-7.5B2I-TR
• Description: IC SRAM 4MBIT 7.5NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF12836A-7.5B2I-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

OPERATING RANGE (IS61/64VFxxxxx)
Range
Commercial
Industrial
Automotive
DC ELECTRICAL CHARACTERISTICS
Symbol
V
V
V
V
I
12
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
OPERATING RANGE (IS61/64LFxxxxx)
Range
Commercial
Industrial
Automotive
I
lI
lO
Oh
Ol
Ih
Il
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Ambient Temperature
Ambient Temperature
-40°C to +125°C
-40°C to +125°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
I
I
I
I
V
V
Oh
Oh
Ol
Ol
ss
ss
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
IN
OuT
≤ V
(Over Operating Range)
≤ V
dd
ddq
(1)
2.5V -5% +10%
2.5V -5% +10%
2.5V -5% +10%
, OE = V
3.3V ± 5%
3.3V ± 5%
3.3V ± 5%
V
V
DD
DD
Ih
Min.
–0.3
2.4
2.0
–5
–5
—
3.3V/2.5V ± 5%
2.5V -5% +10%
2.5V -5% +10%
2.5V -5% +10%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
3.3V
V
V
V
dd
Max.
DDq
0.4
0.8
DDq
—
5
5
+ 0.3
Integrated Silicon Solution, Inc.
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
V
dd
Max.
0.4
0.7
—
5
5
+ 0.3
09/28/2010
Unit
µA
µA
Rev. F
V
V
V
V