IS61LF12836A-7.5B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LF12836A-7.5B2I-TR Datasheet - Page 5

• Manufacturer Part Number: IS61LF12836A-7.5B2I-TR
• Description: IC SRAM 4MBIT 7.5NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF12836A-7.5B2I-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Integrated Silicon Solution, Inc.
Rev. F
09/28/2010
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
119 BGA PACKAGE PIN CONFIGURATION
256k
PIN DESCRIPTIONS
Note: * A
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2, CE2
BWx (x=a,b)
BWE
G
H
M
A
B
C
D
E
F
K
L
N
P
R
T
U
J
x
18 (TOP VIEW)
0
and A
V
V
V
V
V
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Byte Write Enable
DQPb
DQb
DQb
DQb
DQb
CE2
V
NC
NC
NC
NC
NC
NC
A
A
A
A
2
DD
MODE
BWb
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
A
A
A
A
3
ADSP
ADSC
BWE
ADV
CLK
GW
V
V
V
NC
OE
NC
A
A
NC
NC
CE
4
DD
DD
DD
1
0
*
*
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
5
A
A
A
A
Symbol
OE
ZZ
MODE
NC
DQa-DQb
DQPa-Pb
V
V
Vss
dd
ddq
DQPa
CE2
DQa
DQa
DQa
DQa
V
NC
NC
NC
NC
NC
NC
A
A
A
A
6
DD
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
V
V
V
V
V
DQa
DQa
DQa
DQa
NC
NC
NC
NC
NC
NC
NC
ZZ
DDQ
DDQ
DDQ
DDQ
DDQ
7
5