IS61LF12836A-7.5B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LF12836A-7.5B2I-TR Datasheet - Page 4

• Manufacturer Part Number: IS61LF12836A-7.5B2I-TR
• Description: IC SRAM 4MBIT 7.5NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF12836A-7.5B2I-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
Note: * A
119 BGA PACKAGE PIN CONFIGURATION
128k
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2, CE2 Synchronous Chip Select
BWx (x=a-d)
BWE
G
M
A
B
C
D
E
H
K
N
P
R
U
F
J
L
T
x
0
36 (TOP VIEW)
and A
V
V
V
V
V
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
NC
NC
NC
NC
1
DDQ
DDQ
DDQ
DDQ
DDQ
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
1
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Byte Write Controls
Byte Write Enable
DQPc
DQPd
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
CE2
V
NC
NC
2
A
A
A
DD
MODE
BWd
BWc
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
A
A
A
A
3
ADSP
ADSC
BWE
ADV
CLK
V
GW
V
V
NC
CE
OE
NC
A
A
NC
A
4
DD
DD
DD
1
0
*
*
BWb
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
NC
A
A
A
A
5
Symbol
OE
ZZ
MODE
NC
DQa-DQd
DQPa-Pd
V
V
Vss
dd
ddq
DQPb
DQPa
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
CE2
V
NC
NC
6
A
A
A
DD
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
V
V
V
V
V
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
NC
NC
NC
ZZ
Integrated Silicon Solution, Inc.
DDQ
DDQ
DDQ
DDQ
DDQ
7
09/28/2010
Rev. F