IS61LF12836A-7.5B2I-TR ISSI, Integrated Silicon Solution Inc, IS61LF12836A-7.5B2I-TR Datasheet - Page 18

• Manufacturer Part Number: IS61LF12836A-7.5B2I-TR
• Description: IC SRAM 4MBIT 7.5NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF12836A-7.5B2I-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

WRITE CYCLE TIMING
18
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
BWd-BWa
DATA
Address
DATA
ADSC
ADSP
CLK
ADV
BWE
CE2
CE2
OUT
GW
OE
CE
IN
t
t
t
CES
CES
High-Z
High-Z
CES
t
t
SS
AS
Single Write
WR1
t
ADV must be inactive for ADSP Write
DS
t
t
t
WS
WS
WS
t
t
t
t
SH
t
AH
CEH
CEH
CEH
t
KH
WR1
1a
t
KC
t
t
t
WH
WH
WH
t
DH
WR2
t
KL
BW4-BW1 only are applied to first cycle of WR2
t
WS
CE2 and CE3 only sampled with ADSP or ADSC
WR2
2a
CE1 Masks ADSP
Burst Write
t
AVS
t
WH
2b
t
AVH
2c
ADSP is blocked by CE1 inactive
2d
ADSC initiate Write
Write
WR3
WR3
Integrated Silicon Solution, Inc.
3a
Unselected
Unselected with CE2
09/28/2010
Rev. F