BZA856A T/R NXP Semiconductors, BZA856A T/R Datasheet - Page 4

• Manufacturer Part Number: BZA856A T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800Ar

Specifications of BZA856A T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 5.88 V
• Peak Surge Current: 3.2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 24 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA856A,115

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
2000 Sep 25
V
I
V
r
S
C
I
SYMBOL
j
R
ZSM
diff
= 25 °C unless otherwise specified.
F
Z
Z
Quadruple ESD transient voltage
suppressor
d
forward voltage
reverse current
working voltage
differential resistance
temperature coefficient
diode capacitance
non-repetitive peak reverse current t
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
BZA862A
BZA868A
BZA820A
PARAMETER
I
V
V
V
V
I
I
I
f = 1 MHz; V
F
Z
Z
Z
p
R
R
R
R
= 1 ms; T
= 200 mA
= 1 mA
= 1 mA
= 1 mA
= 3 V
= 4 V
= 4.3 V
= 15 V
CONDITIONS
4
amb
R
= 0
= 25 °C
−
−
−
−
−
5.32
5.89
6.46
19
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
−
−
−
−
−
5.6
6.2
6.8
20
−
−
−
−
−0.2
1.8
3
16
−
−
−
−
−
−
−
−
BZA800A-series
TYP.
Product data sheet
1.3
2 000
700
200
100
5.88
6.51
7.14
21
400
300
200
125
−
−
−
−
240
200
180
50
3.2
2.9
2.6
0.6
MAX.
V
nA
nA
nA
nA
V
V
V
V
Ω
Ω
Ω
Ω
mV/K
mV/K
mV/K
mV/K
pF
pF
pF
pF
A
A
A
A
UNIT