MT48H16M32LFCM-6 IT:B Micron Technology Inc, MT48H16M32LFCM-6 IT:B Datasheet - Page 53

• Manufacturer Part Number: MT48H16M32LFCM-6 IT:B
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-6 IT:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Figure 23: Alternating Bank Read Accesses
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank 0
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
Note:
T1
NOP
1. For this example, BL = 4 and CL = 2.
Enable auto precharge
t CMS
t CL
Column m
Bank 0
T2
READ
t CMH
t CH
CL - bank 0
T3
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t LZ
t AC
53
ACTIVE
Bank 3
T4
Row
Row
D
OUT
t OH
t AC
t RCD - bank 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
D
NOP
OUT
t OH
t AC
Enable auto precharge
Column b
Bank 3
T6
READ
D
OUT
t OH
t AC
1
t RP - bank 0
CL - bank 3
© 2007 Micron Technology, Inc. All rights reserved.
T7
NOP
D
READ Operation
Don’t Care
OUT
t OH
t AC
Bank 0
Row
Row
T8
ACTIVE
D
OUT
t OH
t RCD - bank 0
Undefined
t AC