IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet

no-image

IS64WV51216BLL-10MA3

Manufacturer Part Number
IS64WV51216BLL-10MA3
Description
IC SRAM 8MBIT 10NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS64WV51216BLL-10MA3

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
2.4 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
48-MBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS64WV51216BLL-10MA3
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS64WV51216BLL-10MA3
Manufacturer:
ISSI
Quantity:
8 000
Part Number:
IS64WV51216BLL-10MA3-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
512K x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FUNCTIONAL BLOCK DIAGRAM
FEATURES
• High-speed access times:
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
• Easy memory expansion with CE and OE op-
• CE power-down
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single power supply
• Packages available:
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
noise immunity
tions
required
V
speed = 20ns for V
V
speed = 10ns for V
speed = 8ns for V
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
8, 10, 20 ns
DD
DD
1.65V to 2.2V (IS61WV51216ALL)
2.4V to 3.6V (IS61/64WV51216BLL)
DD
DD
DD
3.3V + 5%
1.65V to 2.2V
2.4V to 3.6V
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A18
VDD
GND
WE
CE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
are high-speed, 8M-bit static RAMs organized as 512K
words by 16 bits. It is fabricated using
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 44-pin
TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
MEMORY ARRAY
COLUMN I/O
ISSI
512K x 16
IS61WV51216ALL/BLL and IS64WV51216BLL
OCTOBER 2009
ISSI
's high-perform-
1

Related parts for IS64WV51216BLL-10MA3

IS64WV51216BLL-10MA3 Summary of contents

Page 1

... Rev. F 10/01/09 DESCRIPTION ISSI The IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits fabricated using ance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfor- mance and low power consumption devices. ...

Page 2

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 48-pin mini BGA (9mmx11mm I I GND A7 I/O A17 I VDD I/O NC A16 I I/O A14 I/O I/O A15 A12 I/O NC A13 15 H A18 A8 A9 A10 A11 PIN DESCRIPTIONS A0-A18 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input ...

Page 3

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL PIN CONFIGURATIONS 44-Pin TSOP (Type II I/O0 7 I/O1 8 I/O2 9 I/O3 10 VDD 11 GND 12 I/O4 13 I/O5 14 I/ PIN DESCRIPTIONS A0-A18 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) ...

Page 4

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL TRUTH TABLE Mode Not Selected X H Output Disabled Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM V V Relates to GND Storage Temperature STG P Power Dissipation T Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 5

... Industrial –40°C to +85°C Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%, the device meets 8ns. OPERATING RANGE (V ) (IS64WV51216BLL) DD Range Ambient Temperature Automotive –40°C to +125°C Integrated Silicon Solution, Inc. — www.issi.com Rev ...

Page 6

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage IL I Input Leakage LI I Output Leakage LO Note (min.) = –0.3V DC; V (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. ...

Page 7

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL AC TEST CONDITIONS (HIGH SPEED) Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load AC TEST LOADS Z = 50Ω O OUTPUT Figure 1. Integrated Silicon Solution, Inc. — www.issi.com Rev. F 10/01/09 Unit Unit (2 ...

Page 8

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I OUT I 1 Operating Supply Current I OUT I TTL Standby Current (TTL Inputs ≥ CMOS Standby ≥ V Current (CMOS Inputs) ≥ Note address and data inputs are cycling at the maximum frequency means no input lines change. ...

Page 9

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE ...

Page 10

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE ...

Page 11

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL AC WAVEFORMS (1,2) (Address Controlled) ( READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) (CE and OE Controlled) READ CYCLE NO. 2 ADDRESS LZCE HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions. ...

Page 12

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width t 1 PWE WE Pulse Width (OE = LOW) ...

Page 13

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width (OE = HIGH PWE WE Pulse Width (OE = LOW) ...

Page 14

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL AC WAVEFORMS (1,2) (CE Controlled HIGH or LOW) WRITE CYCLE NO. 1 ADDRESS DATA UNDEFINED OUT VALID ADDRESS t SCE PWE1 t PWE2 t t HZWE HIGH DATA VALID IN Integrated Silicon Solution, Inc. — www.issi.com t HA LZWE CE_WR1.eps Rev. F 10/01/09 ...

Page 15

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL AC WAVEFORMS WRITE CYCLE NO. 2 (WE Controlled HIGH During Write Cycle) ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (WE Controlled LOW During Write Cycle) ADDRESS OE LOW CE LOW UB DATA UNDEFINED OUT D IN Integrated Silicon Solution, Inc. — www.issi.com Rev. F ...

Page 16

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL AC WAVEFORMS WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) ADDRESS OE CE LOW WE UB HZWE D OUT DATA UNDEFINED D IN Notes: 1. The internal Write time is defined by the overlap LOW, UB and/ LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write ...

Page 17

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR DATA RETENTION WAVEFORM V DD 1.65V 1. GND Integrated Silicon Solution, Inc. — www.issi.com Rev. F 10/01/09 Test Condition See Data Retention Waveform = 1.2V, CE ≥ ...

Page 18

... Voltage Range: 1.65V to 2.2V Speed (ns) Order Part No. 20 IS61WV51216ALL-20MI IS61WV51216ALL-20TI Automotive Range: -40°C to +125°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No. 10 IS64WV51216BLL-10MA3 IS64WV51216BLL-10MLA3 IS64WV51216BLL-10CTA3 IS64WV51216BLL-10CTLA3 18 Package 48 mini BGA (9mm x 11mm) 48 mini BGA (9mm x 11mm), Lead-free TSOP (Type II) TSOP (Type II), Lead-free = 2.4V - 3.6V ...

Page 19

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL Integrated Silicon Solution, Inc. — www.issi.com Rev. F 10/01/09 19 ...

Page 20

... IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 20 Integrated Silicon Solution, Inc. — www.issi.com Rev. F 10/01/09 ...

Related keywords