IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 10

• Manufacturer Part Number: IS64WV51216BLL-10MA3
• Description: IC SRAM 8MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS64WV51216BLL-10MA3

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 8M (512K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
10
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
V
RC
HZB
AA
OHA
ACE
DOE
HZOE
LZOE
HZCE
LZCE
BA
LZB
DD
-0.3V and output loading specified in Figure 1a.
(2
(2)
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
(1)
Min.
2.5
20
—
—
—
—
0
0
0
3
0
0
(Over Operating Range)
-20 ns
Integrated Silicon Solution, Inc. — www.issi.com
Max.
—
20
—
20
—
—
—
8
8
8
8
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10/01/09
Rev. F