IS61LF51236A-7.5TQI ISSI, Integrated Silicon Solution Inc, IS61LF51236A-7.5TQI Datasheet - Page 14

• Manufacturer Part Number: IS61LF51236A-7.5TQI
• Description: IC SRAM 18MBIT 7.5NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF51236A-7.5TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

OPERATING RANGE (IS61VFxxxxx)
IS61LF25672A
IS61VF25672A
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
14
OPERATING RANGE (IS61LFxxxxx)
Symbol Parameter
I
I
I
I
CC
SB
SBI
SB
Symbol
V
V
V
V
I
I
LI
LO
Range
Commercial
Industrial
V
V
Range
Commercial
Industrial
OH
OL
IH
IL
2
IL
IH
SS
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
(max.) = V
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DD
Ambient Temperature
Ambient Temperature
– 0.2V.
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
IS61LF51236A
0°C to +70°C
IS61VF51236A IS61VF102418A
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
ZZ>V
All Inputs ≤ 0.2V or ≥ V
f = 0
DD
DD
IN
≤ V
= Max.,
= Max.,
IH
IL
IH
SS
, f = Max.
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
OH
OH
OL
OL
SS
SS
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
IL
KC
or ≥ V
IN
OUT
IL
min.
,
≤ V
(Over Operating Range)
≤ V
IH
DD
,
DD
DDQ
DD
(1)
(1)
– 0.2V
– 0.2V,
, OE = V
(Over Operating Range)
IS61LF102418A
2.5V ± 5%
2.5V ± 5%
Temp. range
3.3V ± 5%
3.3V ± 5%
DD
V
V
or V
DD
Com.
Com.
Com.
Com.
DD
IH
Ind.
Ind.
Ind.
Ind.
SS
. It exhibits ±100 µA maximum leakage current when tied to ≤
Min.
–0.3
2.4
2.0
—
–5
–5
250
275
140
150
110
125
x18
60
75
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
3.3V
2.5V ± 5%
2.5V ± 5%
V
MAX
6.5
275
140
150
110
125
x36
250
V
V
60
75
DD
Max.
DDQ
0.4
0.8
DDQ
—
5
5
+ 0.3
300
350
140
150
110
125
x72
60
75
Integrated Silicon Solution, Inc.
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
250
140
150
110
125
240
x18
60
75
V
7.5
MAX
DD
Max.
0.4
0.7
—
5
5
+ 0.3
240
250
140
150
110
125
x36
60
75
07/29/2010
Unit
mA
mA
mA
mA
Unit
µA
µA
Rev. K
V
V
V
V