MT46H32M32LFCM-6 L IT:A Micron Technology Inc, MT46H32M32LFCM-6 L IT:A Datasheet - Page 24

• Manufacturer Part Number: MT46H32M32LFCM-6 L IT:A
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M32LFCM-6 L IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – AC Operating Conditions
Table 10: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–9 apply to all the parameters in this table; V
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Parameter
Access window
of DQ from
CK/CK#
Clock cycle time CL = 3
CK high-level width
CK low-level width
CKE minimum pulse width
(high and low)
Auto precharge write recovery
+ precharge time
DQ and DM input hold time
relative to DQS (fast slew rate)
DQ and DM input hold time
relative to DQS (slow slew rate)
DQ and DM input setup time
relative to DQS (fast slew rate)
DQ and DM input setup time
relative to DQS (slow slew rate)
DQ and DM input pulse width
(for each input)
Access window
of DQS from
CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last DQ
valid, per group, per access
WRITE command to first DQS
latching transition
DQS falling edge from CK
rising – hold time
DQS falling edge to CK rising –
setup time
Data valid output window
(DVW)
Half-clock period
CL = 3
CL = 2
CL = 2
CL = 3
CL = 2
Symbol
t
DQSCK
t
t
t
t
t
DQSQ
DQSH
t
DIPW
t
t
DQSL
DQSS
t
t
t
t
t
t
t
DAL
DSH
t
CKE
t
t
DH
DH
DSS
n/a
DS
DS
AC
CK
CH
HP
CL
f
s
f
s
Min
0.45
0.45
0.75
t
t
t
2.0
2.0
0.6
0.7
0.6
0.7
1.8
2.0
2.0
0.4
0.4
0.2
0.2
QH -
CH,
12
CL
5
1
–
–
Electrical Specifications – AC Operating Conditions
-5
t
DQSQ
DD
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.4
/V
–
–
–
–
–
–
–
–
–
–
–
–
DDQ
24
= 1.70–1.95V
Min
0.45
0.45
0.75
t
t
t
2.0
2.0
5.4
0.6
0.7
0.6
0.7
1.9
2.0
2.0
0.4
0.4
0.2
0.2
QH -
CH,
12
CL
1
–
–
-54
t
DQSQ
Max
0.55
0.55
0.45
1.25
1Gb: x16, x32 Mobile LPDDR SDRAM
5.0
6.5
5.0
6.5
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
0.45
0.45
0.75
t
t
2.0
2.0
0.6
0.7
0.6
0.7
2.1
2.0
2.0
0.4
0.4
0.2
0.2
CH,
t
QH -
12
CL
6
1
–
–
-6
t
DQSQ
Max
0.55
0.55
0.45
1.25
5.5
6.5
5.5
6.5
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
Min
0.45
0.45
0.75
t
t
2.0
2.0
7.5
0.8
0.9
0.8
0.9
1.8
2.0
2.0
0.4
0.4
0.2
0.2
t
QH -
CH,
12
CL
1
–
–
©2007 Micron Technology, Inc. All rights reserved.
-75
t
DQSQ
Max
0.55
0.55
1.25
6.0
6.5
6.0
6.5
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
ns
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
–
13, 14,
13, 14,
Notes
13, 17
10
11
12
15
15
16
17
18