MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 15

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Specifications – DC and AC
Table 8:
Table 9:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Parameter
Parameter/Condition
V
V
V
I/O pins voltage relative to V
Storage temperature (plastic)
Short circuit output current
Supply voltage
I/O supply voltage
I/O reference voltage
I/O termination voltage (system)
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current:
(DQ are disabled; 0V ≤ V
Full-drive option output
levels: (x4, x8, x16)
Reduced-drive option
output levels: (x16 only)
Ambient operating
temperatures
DD
DD
REF
Q supply voltage relative to V
supply voltage relative to V
and inputs voltage relative to V
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions (-5B)
Notes: 1–5 and 17 apply to the entire table; Notes appear on page 26; V
IN
≤ V
DD
OUT
, V
REF
Stresses greater than those listed in Table 8 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
≤
SS
V
High current (V
V
V
Low current (V
0.373V, maximum V
maximum V
High current (V
V
V
Low current
0.763V, maximum V
maximum V
Commercial
Industrial
pin 0V ≤ V
DD
SS
DD
REF
DD
REF
SS
Q
Q - 0.373V, minimum
Q - 0.373V, minimum
, minimum V
, minimum V
)
SS
IN
TT
(V
TT
≤ 1.35V
)
)
OUT
OUT
OUT
OUT
TT
TT
=
)
)
=
=
=
REF
REF
,
,
15
Symbol
V
V
V
V
I
IH
V
IL
I
V
I
I
OHR
DD
I
OLR
T
T
OH
REF
OZ
OL
DD
(
I
(
TT
A
A
I
DC
DC
Q
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
0.49 × V
V
V
REF
REF
+16.8
–16.8
Min
+2.5
+2.5
–0.3
–40
+9
–2
–5
–9
+ 0.15
0
- 0.04
DD
–0.5V
1Gb: x4, x8, x16 DDR SDRAM
Min
–1V
–1V
–1V
–55
Q
–
DD
Q = +2.6V ±0.1V, V
0.51 × V
V
V
V
REF
REF
DD
Max
+2.7
+2.7
+70
+85
+2
+5
V
+ 0.04
–
–
–
–
- 0.15
+ 0.3
©2003 Micron Technology, Inc. All rights reserved.
DD
DD
+3.6V
+3.6V
+3.6V
+150
Max
Q + 0.5V
50
Q
Units
mA
mA
mA
mA
µA
µA
°C
°C
DD
V
V
V
V
V
V
= +2.6V ±0.1V
Units
37, 42, 45
mA
Notes
°C
37, 42
38, 40
39, 40
V
V
V
V
7, 45
8, 45
29
29