M25P20-VMP6TGB NUMONYX, M25P20-VMP6TGB Datasheet - Page 52

• Manufacturer Part Number: M25P20-VMP6TGB
• Description: IC FLASH 2MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P20-VMP6TGB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 2M (256K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P20-VMP6TGBTR

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Revision history
Table 28.
25-May-2001
16-May-2002
12-Sep-2002
13-Dec-2002
24-Nov-2003
05-Aug-2004
21-Dec-2004
01-Aug-2005
11-Sep-2001
12-Apr-2001
16-Jan-2002
26-Apr-2004
Date
Document revision history
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
2.0
3.0
4.0
5.0
6.0
Document written
Serial Paged Flash Memory renamed as Serial Flash Memory
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their
contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
FAST_READ instruction added. Document revised with new timings, V
I
Programming, Release for Deep Power-down made more precise. Value
of t
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
out sequence.
VFQFPN8 package (MLP8) added. Document promoted to full datasheet.
Typical Page Program time improved. Write Protect setup and hold times
specified, for applications that switch Write Protect to exit the Hardware
Protection mode immediately before a WRSR, and to enter the Hardware
Protection mode again immediately after.
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
40MHz AC Characteristics table included as well as 25MHz. I
t
package
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices. Device Grade clarified
Device Grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
2 Notes removed from
text changes. End timing line of t
Timing.
Updated Page Program (PP) instructions in
Program
Grade 6)
CC3
SE
(typ) and t
W
and clock slew rate. Descriptions of Polling, Hold Condition, Page
(max) modified.
(PP),
and
BE
Instruction Times (Device Grade
Instruction Times, process technology T9HX (Device
(typ) values improved. Change of naming for VDFPN8
Table 26: Ordering Information
Changes
SHQZ
modified in
IO
; DC Characteristics/V
Page
3).
Programming,
Figure 25: Output
Scheme. Small
CC3
IL
Page
(max),
WI
,