M29W320DT70ZE6F NUMONYX, M29W320DT70ZE6F Datasheet - Page 13

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M29W320DT70ZE6F

Manufacturer Part Number
M29W320DT70ZE6F
Description
IC FLASH 32MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W320DT70ZE6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W320DT70ZE6F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
2.7
2.8
2.9
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
V
The V
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function provides a hardware method of protecting
the 16 Kbyte Boot Block. The V
When V
and Erase operations in this block are ignored while V
When V
of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the
16 Kbyte Boot Block unless the block is protected using Block Protection.
When V
Bypass mode. When V
During Unlock Bypass Program operations the memory draws I
programming circuits. See the description of the Unlock Bypass command in the Command
Interface section. The transitions from V
t
Never raise V
memory may be left in an indeterminate state.
A 0.1µF capacitor should be connected between the V
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, I
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if V
even if RP is at V
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V
least t
ready for Bus Read and Bus Write operations after t
See the Ready/Busy Output section,
Holding RP at V
and Erase operations on all blocks will be possible. The transition from V
slower than t
VHVPP
PP/
PP
PLPX
Write Protect (V
, see
PP
PP
PP
/Write Protect pin provides two functions. The V
/Write Protect is Low, V
/Write Protect is High, V
/Write Protect is raised to V
. After Reset/Block Temporary Unprotect goes High, V
Figure
PHPHH
PP
PP
/WP is at V
/Write Protect to V
ID
ID
will temporarily unprotect the protected Blocks in the memory. Program
13.
.
.
PP
/Write Protect returns to V
IL
, then the 16 KByte outermost boot block will remain protect
PP
PP
/WP)
IL
/Write Protect pin must not be left floating or unconnected.
PP
IH
, the memory protects the 16 Kbyte Boot Block; Program
, the memory reverts to the previous protection status
Table 15
from any mode except Read mode, otherwise the
PP
IH
the memory automatically enters the Unlock
to V
PP
and
and from V
Figure
IH
PHEL
or V
PP
PP
PP
/Write Protect is Low.
/Write Protect pin and the V
or t
12, for more details.
IL
function allows the memory to
normal operation resumes.
PP
RHEL
PP
to V
IH
, whichever occurs last.
from the pin to supply the
, the memory will be
IH
must be slower than
IH
to V
ID
PP
must be
.
IL
, for at
SS
13/56

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