M29W320DT70ZE6F NUMONYX, M29W320DT70ZE6F Datasheet - Page 45

• Manufacturer Part Number: M29W320DT70ZE6F
• Description: IC FLASH 32MBIT 70NS 48TFBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W320DT70ZE6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 23.
Table 24.
2Ch
2Dh
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Eh
2Fh
x16
20h
21h
22h
23h
24h
25h
26h
x16
27h
28h
29h
30h
Address
Address
CFI Query System Interface Information
5Ch
3Ch
4Eh
5Ah
5Eh
3Ah
3Eh
4Ah
4Ch
50h
52h
54h
56h
58h
60h
36h
38h
40h
42h
44h
46h
48h
Device Geometry Definition
x8
x8
00C5h
00B5h
000Ah
0027h
0036h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
0016h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
Data
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
n
in number of bytes
Description
Description
n
n
times typical
ms
n
n
n
times typical
ms
times typical
n
n
times typical
µs
n
µs
n
512µs
Value
12.5V
11.5V
16 Kbyte
16µs
4 MByte
2.7V
3.6V
16s
x8, x16
NA
NA
NA
NA
Async.
1s
Value
NA
4
1
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