IDT70121S55J IDT, Integrated Device Technology Inc, IDT70121S55J Datasheet - Page 3

• Manufacturer Part Number: IDT70121S55J
• Description: IC SRAM 18KBIT 55NS 52PLCC
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70121S55J

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 18K (2K x 9)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 52-PLCC
• Density: 18Kb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 22b
• Package Type: PLCC
• Operating Temp Range: 0C to 70C
• Number Of Ports: 2
• Supply Current: 240mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 52
• Word Size: 9b
• Number Of Words: 2K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 70121S55J

Maximum Operating Temperature
and Supply Voltage
NOTES:
1. This is the parameter T
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. At Vcc < 2.0V leakages are undefined.
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
I
Commercial
Industrial
V
T
T
OUT
BIAS
STG
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Symbol
TERM
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliabilty.
maximum, and is limited to < 20mA for the period of V
Symbol
V
V
|I
|I
TERM
LO
OL
OH
LI
(2)
|
|
Grade
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Under Bias
Storage
DC Output
Current
Terminal Voltage
with Respect
to GND
Temperature
Temperature
Parameter
-40
A
0
Temperature
Rating
. This is the "instant on" case temperature.
O
Ambient
C to +70
O
C to +85
(1)
O
O
C
C
(1)
GND
I
I
V
V
0V
0V
OL
OH
CC
CC
Commercial
& Industrial
-0.5 to +7.0
-55 to +125
-65 to +150
= +4mA
= -4mA
= 5.5V, V
= 5.5V, CE = V
50
TERM
(1)
5.0V
5.0V
> V
IN
Vcc
cc
= 0V to V
Test Conditions
+
+
+ 10%.
10%
10%
IH
2654 tbl 02
2654 tbl 01
, V
Unit
mA
o
o
V
C
C
OUT
CC
= 0V to V
3
Recommended DC
Operating Conditions
Capacitance
NOTE:
1. This parameter is determined by device characterization but is not production
NOTES:
1. V
2. V
Symbol
Symbol
tested.
GND
C
V
V
V
C
IL
TERM
CC
OUT
IH
IL
(V
IN
CC
> -1.5V for pulse width less than 10ns.
CC
must not exceed Vcc + 10%.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Capacitance
Output Capacitance
= 5.0V ± 10%)
Industrial and Commercial Temperature Ranges
Parameter
Parameter
Min.
2.4
___
___
___
70121S
70125S
(T
A
= +25°C, f = 1.0MHz)
Max.
0.4
10
10
___
Conditions
V
-0.5
Min.
V
4.5
2.2
OUT
0
IN
Min.
2.4
(1)
___
___
___
= 3dV
= 3dV
70121L
70125L
Typ.
5.0
____
____
0
(1)
Max.
0.4
___
5
5
6.0
Max.
Max.
5.5
0.8
10
0
9
(2)
2654 tbl 05
2654 tbl 03
2654 tbl 04
Unit
Unit
Unit
µ A
µ A
pF
pF
V
V
V
V
V
V