NAND08GAH0FZC5E NUMONYX, NAND08GAH0FZC5E Datasheet - Page 12

• Manufacturer Part Number: NAND08GAH0FZC5E
• Description: IC FLASH 8GBIT 52MHZ 153LFBGA
• Manufacturer: NUMONYX

Specifications of NAND08GAH0FZC5E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Speed: 52MHz
• Interface: MMC, SPI
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 153-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Memory array partitioning
4
Figure 5.
1. n = number of last erase group or last write protect group.
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Memory array partitioning
The basic unit of data transfer to/from the device is one byte. All data transfer
operations which require a block size always define block lengths as integer
multiples of bytes. Some special functions need other partition granularity.
For block oriented commands, the following definitions are used:
Figure 5
Memory array structure
Block: the unit which is related to the block oriented read and write commands.
Its size is the number of bytes which are transferred when one block command
is issued by the host. The size of a block is either programmable or fixed. The
information about allowed block sizes and the programmability is stored in the
CSD register.
Erase group: the unit which is related to special erase and write commands
defined for R/W cards. Its size is the smallest number of consecutive write
blocks which can be addressed for erase. The size of the erase group depends
on each device and is stored in the CSD.
Write protect group: the smallest unit that may be individually write protected.
Its size is defined in units of erase groups. The size of a WP-group depends on
each device and is stored in the CSD.
shows the NANDxxxxH0x memory array organization.
MultiMediaCard
Write protect group 0
Write protect group 1
Write protect group 2
Write protect group n
Erase group 0
Erase group 1
Erase group n
Block 0
NAND02GRH0L, NAND02GAH0L, NAND08GAH0N
AI13615e