IDT70T3519S133BC IDT, Integrated Device Technology Inc, IDT70T3519S133BC Datasheet

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IDT70T3519S133BC

Manufacturer Part Number
IDT70T3519S133BC
Description
IC SRAM 9MBIT 133MHZ 256BGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70T3519S133BC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
9M (256K x 36)
Speed
133MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70T3519S133BC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70T3519S133BC
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3519S133BC8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3519S133BCI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Features:
Functional Block Diagram
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx
©2009 Integrated Device Technology, Inc.
NOTES:
1. Address A
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.4 (200MHz)/3.6ns (166MHz)/
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
and the sleep mode pins themselves (ZZx) are not affected during sleep mode.
address inputs @ 200MHz
FT/PIPE
FT/PIPE
CE
CE
R/W
OE
0L
1L
17
L
L
L
L
BE
BE
BE
BE
is a NC for the IDT70T3599. Also, Addresses A
3L
1L
0L
2L
4.2ns (133MHz)(max.)
1/0
1/0
1
0
0a 1a
a
CLK
0b 1b
b
L
I/O
REPEAT
CNTEN
0L
A
ADS
- I/O
17L (1)
0c 1c
A
0L
c
L
L
COL
35L
L
INT
0/1
L
L
0d 1d
d
1d 0d 1c 0c 1b 0b 1a 0a
a bc d
HIGH-SPEED 2.5V
256/128/64K x 36
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Counter/
Address
CE 0 L
CE1 L
Reg.
R / W L
ZZ
17
L
(2)
and A
16
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Din_L
ADDR_L
256/128/64K x 36
are NC's for the IDT70T3589.
B
W
0
L
INTE RRUPT
DETECTION
B
W
1
L
MEMORY
COLLISION
ARRAY
CONTROL
B
W
2
L
LOGIC
B
W
3
L
LOGIC
ZZ
B
W
3
R
1
Dout18-26_R
Dout27-35_R
B
W
2
R
Dout9-17_R
Dout0-8_R
ADDR_R
B
W
1
R
B
W
0
R
Din_R
Interrupt and Collision Detection Flags
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 256-pin Ball Grid Array (BGA), a 208-pin
Plastic Quad Flatpack (PQFP) and 208-pin fine pitch Ball
Grid Array (fpBGA)
Supports JTAG features compliant with IEEE 1149.1
Due to limited pin count JTAG is not supported on the 208-
pin PQFP package
Green parts available, see ordering information
ZZ
R
(2)
R/ W R
0a 1a
Counter/
Address
Reg.
CE 0 R
CE1 R
0b 1b
d c b a
0c 1c
0d 1d
1d 0d
d
0/1
COL
INT
I/O
1c 0c
ADS
CNTEN
REPEAT
R
R
c
0R
A
A
0R
17R ( 1)
R
IDT70T3519/99/89S
- I/O
R
R
1b 0b
35R
b
CLK
TD O
TDI
R
1a 0a
a
1/0
1/0
1
0
JANUARY 2009
,
5666 drw 01
JTAG
BE
BE
BE
BE
3R
2R
1R
0R
FT/PIPE
R/W
FT/PIPE
TCK
TMS
TRST
OE
CE
CE
R
R
0 R
1 R
R
R
DSC 5666/10
,

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IDT70T3519S133BC Summary of contents

Page 1

... Features: True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features ...

Page 2

... The IDT70T3519/99/ high-speed 256/128/64K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times ...

Page 3

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Pin Configuration (3,4,5,6,9) 06/19/ TDI NC (1) A 17L I/O NC TDO NC 18L I/O I/O V ...

Page 4

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Pin Configuration (3,4,5,6,9,10) 06/19/02 1 I/O 19L 2 I/O 19R 3 I/O 20L 4 I/O 20R 5 V DDQL I/O 7 21L 8 I/O 21R 9 I/O ...

Page 5

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Pin Configuration (3,4,5,6,9) 01/23/ I/O I/O V COL TDO 19L 18L I/O V I/O A TDI 20R SS 18R ...

Page 6

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Pin Names Left Port Right Port Chip Enables (Input R/W R/W Read/Write Enable (Input Output Enable ...

Page 7

... Counter Set to last valid ADS load (n) I/O , BEn and OE and BEn , the rising edge of CLK, regardless of all other memory control signals including CE IL 6.42 7 Industrial and Commercial Temperature Ranges (1,2,3,4) Byte 1 Byte 0 I/O I/O MODE 18-26 9-17 0-8 High-Z High-Z Deselected–Power Down ...

Page 8

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Recommended Operating Temperature and Supply Voltage Commercial Industrial NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Recommended DC Operating Conditions with V Symbol NOTES: ...

Page 9

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Absolute Maximum Ratings Symbol Rating V V Terminal Voltage TERM with Respect to GND DD ( Terminal Voltage TERM DDQ (V ) with Respect to ...

Page 10

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter CE and CE I Dynamic Operating DD L Current (Both Outputs Disabled, (1) Ports Active ...

Page 11

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM AC Test Conditions (V Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load DATA OUT ∆ tCD ...

Page 12

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) Symbol (1) t Clock Cycle Time (Flow-Through) CYC1 (1) t Clock Cycle Time (Pipelined) CYC2 (1) t ...

Page 13

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Read Cycle for Pipelined Operation (1,2) (FT/PIPE = CYC2 t CH2 CLK ...

Page 14

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform of a Multi-Device Pipelined Read t CYC2 t t CH2 CL2 CLK ADDRESS (B1 0(B1) DATA OUT(B1) ...

Page 15

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Left Port Write to Pipelined Right Port Read CLK "A" R/W "A" ADDRESS "A" MATCH ...

Page 16

... CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) t CYC2 t CH2 CLK CE ...

Page 17

... Output state (High, Low, or High-impedance) is determined by the previous cycle control signals BEn, and ADS = V , CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity ...

Page 18

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Pipelined Read with Address Counter Advance t CYC2 t t CH2 CLK ADDRESS SAD HAD ADS CNTEN ( ...

Page 19

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs) t CYC2 t CH2 CLK ADDRESS (3) INTERNAL An ADDRESS t t SAD ...

Page 20

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Waveform of Interrupt Timing CLK R ADDRESS (3) L 3FFFF ( INS INT ...

Page 21

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Waveform of Collision Timing Both Ports Writing with Left Port Clock Leading CLK L t OFS ( ADDRESS L COL L CLK R t ...

Page 22

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Timing Waveform - Entering Sleep Mode R/W Timing Waveform - Exiting Sleep Mode R/W OE DATA OUT (4) NOTES IH. 2. All timing is same ...

Page 23

... SRAM location. If the interrupt function is not used, address locations 3FFFE and 3FFFF (1FFFF or 1FFFE for IDT70T3599 and FFFF or FFFE for IDT70T3589) are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Collision Detection ...

Page 24

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Depth and Width Expansion The IDT70T3519/99/89 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. ...

Page 25

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM JTAG Timing Specifications t JF TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO TRST t JRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, ...

Page 26

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Identification Register Definitions Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) NOTE: 1. Device ID for IDT70T3599 is 0x331. ...

Page 27

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Ordering Information XXXXX A 999 A Device Power Speed Package Type NOTES: 1. 166MHz I-Temp is only available in the BC-256 package. 2. 200Mhz is only available in the BC-256 ...

Page 28

IDT70T3519/99/89S High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Datasheet Document History: 01/23/03: Initial Datasheet 01/30/03: Page 1 Corrected 208-pin package from TQFP to PQFP 04/25/03: Page 11 Added Capacitance Derating drawing Page 12 Changed t 11/11/03: Page 10 ...

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