MT29F2G08AABWP-ET Micron Technology Inc, MT29F2G08AABWP-ET Datasheet - Page 35

IC FLASH 2GBIT 48TSOP

MT29F2G08AABWP-ET

Manufacturer Part Number
MT29F2G08AABWP-ET
Description
IC FLASH 2GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08AABWP-ET

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
557-1149-2
WRITE PROTECT Operation
Figure 30:
Figure 31:
Figure 32:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
ERASE Enable
ERASE Disable
PROGRAM Enable
The WRITE PROTECT feature protects the device against inadvertent PROGRAM and
ERASE operations. All PROGRAM and ERASE operations are disabled when WP# is LOW.
For WRITE PROTECT timing details, see Figures 30 through 33.
WE#
WP#
R/B#
WE#
WP#
R/B#
WE#
WP#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
80h
60h
60h
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
35
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.

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