MT48H4M16LFB4-8 IT Micron Technology Inc, MT48H4M16LFB4-8 IT Datasheet - Page 20

• Manufacturer Part Number: MT48H4M16LFB4-8 IT
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-8 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
subsequent READ command, and data for a fixed-
length WRITE burst may be immediately followed by a
READ command. Once the READ command is regis-
tered, the data inputs will be ignored, and writes will
not be executed. An example is shown in Figure 20,
WRITE to READ. Data n + 1 is either the last of a burst
of two or the last desired of a longer burst.
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
Data for any WRITE burst may be truncated with a
COMMAND
ADDRESS
Figure 18: WRITE to WRITE
Burst length = 2. DQM is LOW.
COMMAND
DQM is LOW. Each WRITE command may be
to any bank.
CLK
DQ
ADDRESS
Figure 17: WRITE Burst
CLK
DQ
WRITE
BANK,
COL n
T0
D
n
IN
WRITE
BANK,
COL n
D
T0
n
IN
NOP
n + 1
T1
D
IN
n + 1
NOP
T1
D
IN
NOP
T2
DON’T CARE
WRITE
BANK,
COL b
T2
D
b
IN
DON’T CARE
T3
NOP
20
lowed by, or truncated with, a PRECHARGE command
to the same bank (provided that auto precharge was
not activated), and a full-page WRITE burst may be
truncated with a PRECHARGE command to the same
bank. The PRECHARGE command should be issued
t
data element is registered. The auto precharge mode
requires a
less of frequency.
DQM signal must be used to mask input data for the
clock edge prior to, and the clock edge coincident with,
the PRECHARGE command. An example is shown in
Figure 21, WRITE to PRECHARGE. Data n + 1 is either
the last of a burst of two or the last desired of a longer
burst. Following the PRECHARGE command, a subse-
quent command to the same bank cannot be issued
until
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the
command and address buses be available at the
appropriate time to issue the command; the advantage
of the PRECHARGE command is that it can be used to
truncate fixed-length or full-page bursts.
cated with the BURST TERMINATE command. When
truncating a WRITE burst, the input data applied coin-
cident with the BURST TERMINATE command will be
ignored. The last data written (provided that DQM is
LOW at that time) will be the input data applied one
clock previous to the BURST TERMINATE command.
This is shown in Figure 23, Terminating a WRITE Burst,
where data n is the last desired data element of a
longer burst.
WR after the clock edge at which the last desired input
Data for a fixed-length WRITE burst may be fol-
In addition, when truncating a WRITE burst, the
In the case of a fixed-length burst being executed to
Fixed-length or full-page WRITE bursts can be trun-
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RP is met.
t
WR of at least one clock plus time, regard-
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
64Mb: x16