CY7C1041BV33-12ZC Cypress Semiconductor Corp, CY7C1041BV33-12ZC Datasheet - Page 3

• Manufacturer Part Number: CY7C1041BV33-12ZC
• Description: IC SRAM 4MBIT 12NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041BV33-12ZC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1021

Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Document #: 38-05168 Rev. **
OUTPUT
C
C
Note:
V
V
V
V
I
I
I
I
I
3.
IX
OZ
CC
SB1
SB2
IN
OUT
OH
OL
IH
IL
Parameter
INCLUDING
JIG AND
SCOPE
3.3V
Tested initially and after any design or process changes that may affect these parameters.
Parameter
30 pF
[3]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
(a)
CC
R1 317
Operating
Description
Input Capacitance
I/O Capacitance
351
R2
Description
Over the Operating Range (continued)
OUTPUT
[1]
THÉ
VENIN EQUIVALENT
V
V
GND < V
GND < V
Output Disabled
V
f = f
Max. V
V
V
Max. V
CE > V
V
or V
CC
CC
CC
IN
IN
IN
MAX
> V
< V
> V
IN
= Min., I
= Min., I
= Max.,
< 0.3V, f=0
CC
CC
CC
IH
IL
CC
= 1/t
Test Conditions
, f = f
I
OUT
167
, CE > V
,
or
(b)
< V
– 0.3V,
– 0.3V,
OH
OL
RC
< V
T
CC
MAX
A
= 8.0 mA
= –4.0 mA
= 25 C, f = 1 MHz, V
CC
IH
,
1.73V
Test Conditions
Comm’l
Ind’l
Com’l/Ind’l
Com’l
Rise time: 1 V/ns
GND
3.3V
L
CC
Min. Max. Min.
–0.5
2.4
2.2
–1
–1
= 3.3V
-17
V
160
180
0.4
0.5
0.8
0.5
CC
+1
+1
40
8
10%
+
90%
–0.5
ALL INPUT PULSES
2.4
2.2
–1
–1
-20
Max.
V
Max.
150
170
8
8
0.4
0.5
0.8
0.5
CC
+1
+1
40
8
CY7C1041BV33
+
Min.
–0.5
2.4
2.2
–1
–1
-25
V
Max.
130
150
0.4
CC
0.5
0.8
0.5
Page 3 of 11
+1
+1
40
90%
8
Unit
pF
pF
+
10%
Fall time:
1 V/ns
Unit
mA
mA
mA
mA
V
V
V
V
A
A