CY7C1041BV33-12ZC Cypress Semiconductor Corp, CY7C1041BV33-12ZC Datasheet - Page 6

• Manufacturer Part Number: CY7C1041BV33-12ZC
• Description: IC SRAM 4MBIT 12NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1041BV33-12ZC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1021

Data Retention Waveform
Switching Waveforms
Document #: 38-05168 Rev. **
Read Cycle No. 2 (OE Controlled)
Read Cycle No. 1
Notes:
DATA OUT
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
11. Device is continuously selected. OE, CE, BHE and/or BHE = V
CURRENT
DATA OUT
ADDRESS
BHE, BLE
SUPPLY
ADDRESS
V
CC
V
OE
CE
CE
CC
[11, 12]
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
t
LZCE
PU
[12, 13]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
t
OHA
t
CDR
3.0V
t
AA
IL
.
t
RC
DATA RETENTION MODE
t
RC
V
DR
> 2V
DATA VALID
t
HZOE
DATA VALID
3.0V
t
R
t
t
HZCE
HZBE
CY7C1041BV33
t
PD
50%
IMPEDANCE
HIGH
1041BV33-7
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1041BV33–
1041BV33-6
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ICC
ISB
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