M48Z35AV-10MH1E STMicroelectronics, M48Z35AV-10MH1E Datasheet - Page 15

IC NVSRAM 256KBIT 100NS 28SOIC

M48Z35AV-10MH1E

Manufacturer Part Number
M48Z35AV-10MH1E
Description
IC NVSRAM 256KBIT 100NS 28SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M48Z35AV-10MH1E

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2880-5
M48Z35AV-10MH1

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z35AV-10MH1E
Manufacturer:
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M48Z35AV
4
Note:
Note:
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in
Operating and AC measurement
conditions in their projects match the measurement conditions when using the quoted
parameters.
Table 6.
Output Hi-Z is defined as the point where data is no longer driven.
Figure 10. AC measurement load circuit
50 pF for M48Z35AV.
Table 7.
1. Effective capacitance measured with power supply at 5 V. Sampled only, not 100% tested.
2. At 25 °C, f = 1 MHz.
3. Outputs deselected.
Supply voltage (V
Ambient operating temperature (T
Load capacitance (C
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
Symbol
C
C
IO
IN
(3)
Input capacitance
Input / output capacitance
Operating and AC measurement conditions
Capacitance
CC
)
L
Parameter
)
Parameter
C L includes JIG capacitance
DEVICE
UNDER
(1)(2)
Doc ID 6784 Rev 8
TEST
A
)
conditions. Designers should check that the operating
C L = 100pF or
Min
5pF
645Ω
-
-
M48Z35AV
1.75V
Max
3.0 to 3.6
DC and AC parameters
10
10
0 to 70
0 to 3
≤ 5
1.5
50
Unit
pF
pF
Table 6:
Unit
°C
pF
ns
V
V
V
AI03211
15/25

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