IC DRIVER HALF BRIDGE HV 8SOIC

L6384ED013TR

Manufacturer Part NumberL6384ED013TR
DescriptionIC DRIVER HALF BRIDGE HV 8SOIC
ManufacturerSTMicroelectronics
TypeHigh Side/Low Side
L6384ED013TR datasheet
 

Specifications of L6384ED013TR

ConfigurationHalf BridgeInput TypeInverting
Current - Peak400mANumber Of Configurations1
Number Of Outputs2High Side Voltage - Max (bootstrap)600V
Voltage - Supply8 V ~ 16.6 VOperating Temperature-45°C ~ 125°C
Mounting TypeSurface MountPackage / Case8-SOIC (3.9mm Width)
ProductHalf-Bridge DriversRise Time50 ns
Fall Time30 nsSupply Voltage (min)- 0.3 V
Supply Current25 mAMaximum Power Dissipation750 mW
Maximum Operating Temperature+ 125 CMounting StyleSMD/SMT
Bridge TypeHalf BridgeMinimum Operating Temperature- 45 C
Number Of Drivers2For Use With497-5492 - EVAL BOARD FOR L6384/L6385/L6386
Lead Free Status / RoHS StatusLead free / RoHS CompliantDelay Time-
Other names497-6212-2  
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Features
High voltage rail up to 600V
dV/dt immunity ±50V/nsec in full temperature
range
Driver current capability:
– 400mA source,
– 650mA sink
Switching times 50/30 nsec rise/fall with 1nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
Shut down input
Dead time setting
Under voltage lock out
Integrated bootstrap diode
Clamping on V
CC
SO-8/DIP-8 packages
Figure 1.
Block diagram
V
CC
2
UV
DETECTION
1
IN
V
CC
Idt
DEAD
TIME
DT/SD
3
Vthi
October 2007
High-voltage half bridge driver
Description
The L6384E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has an Half - Bridge Driver structure
that enables to drive N-channel Power MOS or
IGBT. The High Side (Floating) Section is enabled
to work with voltage Rail up to 600V. The Logic
Inputs are CMOS/TTL compatible for ease of
interfacing with controlling devices. Matched
delays between Low and High Side Section
simplify high frequency operation. Dead time
setting can be readily accomplished by means of
an external resistor.
BOOTSTRAP DRIVER
R
S
LOGIC
LEVEL
SHIFTER
LVG
DRIVER
Rev 1
L6384E
DIP-8
SO-8
H.V.
V
8
BOOT
HVG
C
BOOT
DRIVER
HVG
7
OUT
LOAD
6
V
CC
5
LVG
4
GND
D97IN518A
www.st.com
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L6384ED013TR Summary of contents

  • Page 1

    Features ■ High voltage rail up to 600V ■ dV/dt immunity ±50V/nsec in full temperature range ■ Driver current capability: – 400mA source, – 650mA sink ■ Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs ...

  • Page 2

    Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    L6384E 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol V Output voltage out V Supply voltage cc I Supply current s V Floating supply voltage boot V High side gate output voltage hvg V Low ...

  • Page 4

    Electrical data 1.3 Recommended operating conditions Table 3. Recommended operating conditions Symbol Pin V 6 Output Voltage out ( Floating Supply Voltage BS f Switching Frequency Supply Voltage cc Junction Temperature ...

  • Page 5

    L6384E 2 Pin connection Figure 2. Pin connection (Top view) Table 4. Pin description N° Pin DT/SD 4 GND 5 LVG 6 V out 7 HVG 8 Vboot DT/SD ...

  • Page 6

    Electrical characteristics 3 Electrical characteristics 3.1 AC operation Table 5. AC operation electrical characteristcs (V Symbol Pin 1 vs High/low side driver turn- 5,7 propagation delay 3 vs Shut down input propagation t onsd 5,7 delay 1 vs ...

  • Page 7

    L6384E Table 6. DC operation electrical characteristcs (continued)(V Symbol Pin High/Low side driver I Source short circuit current so 5,7 I Sink short circuit current si Logic inputs Low level logic threshold V il voltage High level logic threshold V ...

  • Page 8

    Bootstrap driver 4 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode integrated structure replaces the external diode realized by a high ...

  • Page 9

    L6384E For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the T V has to be taken into account when the voltage drop on C drop ...

  • Page 10

    Typical characteristic 5 Typical characteristic Figure 5. Typical rise and fall times vs load capacitance time (nsec) 250 200 150 100 For both high and low side buffers @25˚C Tamb Figure 7. Dead time vs resistance ...

  • Page 11

    L6384E Figure 11. Vcc UV turn On vs temperature Typ. Typ -45 -45 -25 -25 Figure 13. Vcc UV turn Off vs temperature ...

  • Page 12

    Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

  • Page 13

    L6384E Figure 15. DIP-8 mechanical data and package dimensions mm DIM. MIN. TYP. A 3.32 a1 0.51 B 1.15 b 0.356 b1 0.204 D E 7.95 e 2.54 e3 7. 3.18 Z inch MAX. MIN. ...

  • Page 14

    Package mechanical data Figure 16. SO-8 mechanical data and package dimensions mm DIM. MIN. TYP 0.100 A2 1.250 b 0.280 c 0.170 (1) 4.800 4.900 D E 5.800 6.000 (2) 3.800 3.900 E1 e 1.270 h 0.250 L ...

  • Page 15

    ... L6384E 7 Order codes Table 7. Order codes Part number L6384E L6384ED L6384ED013TR Package DIP-8 SO-8 SO-8 Tape and reel Order codes Packaging Tube Tube 15/17 ...

  • Page 16

    Revision history 8 Revision history Table 8. Document revision history Date 12-Oct-2007 16/17 Revision 1 First release L6384E Changes ...

  • Page 17

    ... L6384E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...