VNS1NV04-E STMicroelectronics, VNS1NV04-E Datasheet - Page 16

• Manufacturer Part Number: VNS1NV04-E
• Description: IC PWR MOSFET M03 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Switch Type: Low Side
• Power Switch Family: VNS1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: SO
• Pin Count: 8
• Power Dissipation: 8.3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Protection features
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3.1
3.2
3.3
3.4
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Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current
I
The device integrates:
Overvoltage clamp protection
Internally set at 45 V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability. This
feature is mainly important when driving inductive loads.
Linear current limiter circuit
Limits the drain current I
active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the over temperature threshold T
Over temperature and short circuit protection
These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Over temperature cutout occurs in the
range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted
when the chip temperature falls of about 15 °C below shutdown temperature.
Status feedback
In the case of an over temperature fault condition (T
diagnostic current I
low impedance source, this current may be used in order to warn the control circuit of a
device shutdown. If the drive impedance is high enough so that the input pin driver is not
able to supply the current I
device operation: no requirement is put on the current capability of the input pin driver
except to be able to supply the normal operation drive current I
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
ISS
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
gf
through the input pin in order to indicate fault condition. If driven from a
D
to I
gf
, the input pin will fall to 0 V. This will not however affect the
lim
Doc ID 7381 Rev 2
whatever the input pin voltages. When the current limiter is
j
VND1NV04 - VNN1NV04 - VNS1NV04
> T
jsh
), the device tries to sink a
ISS
.
jsh.