VNN1NV04TR-E STMicroelectronics, VNN1NV04TR-E Datasheet - Page 7

IC PWR MOSF M0-3 40V 1.7A SOT223

VNN1NV04TR-E

Manufacturer Part Number
VNN1NV04TR-E
Description
IC PWR MOSF M0-3 40V 1.7A SOT223
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VNN1NV04TR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
250 mOhm
Current - Peak Output
3.5A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Switch Type
Low Side
Power Switch Family
VNN1NV04
Power Switch On Resistance
250mOhm
Output Current
1.7A
Mounting
Surface Mount
Supply Current
100uA
Package Type
SOT-223
Pin Count
3 +Tab
Power Dissipation
7W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNN1NV04TR-E
Manufacturer:
ST
0
VND1NV04 - VNN1NV04 - VNS1NV04
2.2
2.3
Thermal data
Table 3.
1. When mounted on a standard single-sided FR4 board with 50 mm
Electrical characteristics
Table 4.
R
R
R
Off (-40 °C<Tj<150 °C, unless otherwise specified)
On (-40 °C<Tj<150 °C, unless otherwise specified)
Dynamic (T
Switching
Symbol
V
R
thj-case
thj-lead
thj-amb
V
Symbol
V
V
g
C
CLAMP
I
DS(on)
to all DRAIN pins
I
CLTH
DSS
fs
INTH
INCL
ISS
OSS
(1)
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold
voltage
Supply current from
input pin
Input-source clamp
voltage
Zero input voltage
drain current
(V
Static drain-source on
resistance
Forward
transconductance
Output capacitance
j
(T
=25 °C, unless otherwise specified)
IN
Thermal data
Thermal resistance junction-case
Thermal resistance junction-lead
Thermal resistance junction-ambient
Electrical characteristics
j
=0 V)
=25 °C, unless otherwise specified)
Parameter
Parameter
Doc ID 7381 Rev 2
V
V
V
V
I
I
V
V
V
V
V
V
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
=1 mA
=-1 mA
=0 V; I
=0 V; I
=5 V; I
=5 V; I
=V
=0 V; V
=13 V; V
=25 V; V
=13 V; f=1 MHz; V
=13 V; I
IN
; I
Test conditions
D
D
D
D
D
=0.5 A
=2 mA
=0.5 A; T
=0.5 A
IN
=1 mA
D
IN
IN
=0.5 A
=5 V
=0 V; T
=0 V
j
=25 °C
j
=25 °C
IN
=0 V
SOT-223
2
of Cu (at least 35 μm thick) connected
70
18
(1)
Max value
Min
-1.0
0.5
Electrical specifications
40
36
6
SO-8
65
15
(1)
Typ
100
6.8
45
90
2
DPAK
54
3.5
Max
(1)
150
-0.3
250
500
2.5
55
30
75
8
°C/W
°C/W
°C/W
Unit
Unit
µA
µA
pF
V
V
V
V
S
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