VNS1NV04P-E STMicroelectronics, VNS1NV04P-E Datasheet - Page 8

• Manufacturer Part Number: VNS1NV04P-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04P-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
8/28
Source drain diode (T
Protections (-40 °C<T
Symbol
(dI/dt)
V
t
t
I
t
d(on)
d(off)
RRM
T
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
jsh
gf
rr
jrs
as
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Drain current limit
Step response current limit
Over temperature shutdown
Over temperature reset
Fault sink current
Single pulse avalanche energy
Electrical characteristics (continued)
Parameter
j
j
<150 °C, unless otherwise specified)
=25 °C, unless otherwise specified)
V
V
(see
V
V
V
I
I
I
V
(see
V
V
V
Starting T
V
L=50 mH
(see
gen
SD
SD
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
Doc ID 15586 Rev 2
=0.5 A; V
=0.5 A; dI/dt=6 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
Figure
Figure
Figure 6
Test conditions
j
=25 °C; V
gen
DS
DS
DS
D
D
D
gen
4)
gen
5)
IN
=0.5 A
=1.5 A
=0.5 A; V
=13 V
=13 V
=13 V; T
=R
and
=0 V
=2.2 KΩ
=R
IN MIN
IN MIN
Figure
Figure
DD
j
=330 Ω;
=T
IN
=24 V
=330 Ω
=5 V
jsh
8)
7)
VNN1NV04P-E, VNS1NV04P-E
Min
150
135
1.7
10
55
0.25
Typ
205
100
175
1.3
1.8
1.2
0.8
0.7
2.0
15
5
5
Max
200
1.0
4.0
5.5
4.0
3.5
20
A/µs
Unit
mA
nC
nC
mJ
µs
µs
µs
µs
ns
µs
°C
°C
A
V
A