VNN7NV04TR-E STMicroelectronics, VNN7NV04TR-E Datasheet - Page 17

• Manufacturer Part Number: VNN7NV04TR-E
• Description: MOSFET OMNIFETII 40V 6A SOT-223
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNN7NV04TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 9A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -

VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
3.2
SO-8 maximum demagnetization energy
Figure 30. SO-8 maximum turn-off current versus load inductance
Legend
A = Single Pulse at T
B = Repetitive pulse at T
C = Repetitive Pulse at T
Conditions:
V
Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Figure 31. SO-8 demagnetization
I
CC
LMAX (A)
=13.5 V
V
IN
100
, I
10
L
1
0.1
Jstart
Jstart
Jstart
=150 °C
=100 °C
=125 °C
Demagnetization
L
=0 Ω. In case of repetitive pulses, T
Doc ID 7383 Rev 3
1
L(mH)
Demagnetization
10
C
jstart
B
A
(at beginning of each
Protection features
Demagnetization
t
100
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