VN5E160ASTR-E STMicroelectronics, VN5E160ASTR-E Datasheet
VN5E160ASTR-E
Specifications of VN5E160ASTR-E
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VN5E160ASTR-E Summary of contents
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Features Max supply voltage Operating voltage range Max ON-state resistance (per ch.) Current limitation (typ) OFF-state supply current 1. Typical value with all loads connected. ■ General – Inrush current active management by power limitation – Very low standby current ...
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Contents Contents 1 Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . ...
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VN5E160AS-E List of tables Table 1. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of figures List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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VN5E160AS-E 1 Block diagram and pin configuration Figure 1. Block diagram Signal Clamp Undervoltage IN CS_ DIS CS LOGIC Table 1. Pin function Name V CC OUT GND IN CS CS_DIS Control & Diagnostic DRIVER Over Current temp. Limitation V ...
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Block diagram and pin configuration Figure 2. Configuration diagram (top view) Table 2. Suggested connections for unused and not connected pins Connection / pin Floating To ground 6/ OUT OUT ...
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... Exposure to the conditions in the “absolute maximum ratings” table for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality documents. Table 3. Absolute maximum ratings ...
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Electrical specifications Table 3. Absolute maximum ratings (continued) Symbol Maximum switching energy (single pulse mH; R MAX OUT Electrostatic discharge (human body model 1.5 KΩ 100 pF ...
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VN5E160AS-E 2.3 Electrical characteristics Values specified in this section are for 8 V < V otherwise stated. Table 5. Power section Symbol Parameter V Operating supply voltage CC V Undervoltage shut-down USD Undervoltage shut-down V USDhyst hysteresis R ON-state resistance ...
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Electrical specifications Table 7. Logic inputs Symbol V Low-level input voltage IL I Low-level input current IL V High-level input voltage IH I High-level input current IH V Hysteresis input voltage I(hyst) V Input voltage clamp ICL V Low-level CS_DIS ...
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VN5E160AS-E Table 9. Current sense (8 V < V Symbol OUT OUT ( Current sense ratio drift OUT ( Current sense ratio ...
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Electrical specifications Table 9. Current sense (8 V < V Symbol Delay response time t from rising edge of IN DSENSE2H pin Delay response time between rising edge of Δt DSENSE2H output current and rising edge of current sense Delay ...
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VN5E160AS-E Figure 4. Current sense delay characteristics INPUT CS_DIS LOAD CURRENT CURRENT SENSE Figure 5. OFF-state open-load delay timing Figure 6. Switching characteristics V OUT dV OUT INPUT t t DSENSE2H DSENSE1L OUTPUT STUCK ...
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Electrical specifications Figure 7. Delay response time between rising edge of ouput current and rising edge of current sense (CS enabled OUT I SENSE Figure 8. Output voltage drop limitation 14/37 Δt DSENSE2H I OUTMAX 90% I ...
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VN5E160AS-E Figure 9. I OUT I /I OUT SENSE 620 590 560 530 500 470 440 410 380 350 320 0 A: Max -40 °C to 150 ° Max °C to 150 °C ...
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Electrical specifications Table 11. Truth table Conditions Normal operation Overtemperature Undervoltage Overload Short circuit to GND (Power limitation) OFF-state open-load (with external pull-up the V is high, the SENSE output high impedance, its potential depends ...
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VN5E160AS-E Table 12. Electrical transient requirements (part 1) ISO 7637-2: 2004(E) Test pulse (2) 5b Table 13. Electrical transient requirements (part 2) ISO 7637-2: 2004(E) Test pulse ( ...
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Electrical specifications 2.4 Waveforms Figure 11. Normal operation INPUT INPUT I I OUT OUT V V SENSE SENSE V V CS_DIS CS_DIS Figure 12. Overload or short to GND INPUT INPUT I I LimH LimH I I OUT OUT V ...
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VN5E160AS-E Figure 13. Intermittent overload INPUT INPUT I I LimH LimH I I OUT OUT V V SENSEH SENSEH V V SENSE SENSE V V CS_DIS CS_DIS Figure 14. OFF-state open-load with external circuitry INPUT INPUT V V OUT OUT ...
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Electrical specifications Figure 15. Short OUT OUT I I OUT OUT V V CS_DIS CS_DIS Figure 16. T evolution in overload or short to GND J INPUT INPUT LimH LimH ...
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VN5E160AS-E 2.5 Electrical characteristics curves Figure 17. OFF-state output current Iloff [nA] 350 300 250 200 150 100 50 0 -50 -25 0 Figure 19. Input voltage clamp Vicl [V] 7 6.8 6.6 Iin 6.4 6.2 6 5.8 ...
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Electrical specifications Figure 23. ON-state resistance vs. T Ron [mOhm] 500 450 400 350 Iout= 1A 300 Vcc= 13V 250 200 150 100 50 0 -50 -25 0 Figure 25. Undervoltage shutdown Vusd [ ...
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VN5E160AS-E Figure 29. High-level CS_DIS voltage Vcsdh [V] 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 Figure 31. Low-level CS_DIS voltage Vcsdl [V] 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 Figure ...
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Application information 3 Application information Figure 32. Application schematic +5V μC C ext 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (R This can be used with any type of load. The following ...
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VN5E160AS-E values. This shift varies depending on how many devices are ON in the case of several high- side drivers sharing the same R If the calculated power dissipation leads to a large resistor or several devices have to share ...
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Application information 3.4 Current sense and diagnostic The current sense pin performs a double function (see diagnostic): Current mirror of the load current in normal operation, delivering a current ● proportional to the load one according to a know ratio ...
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VN5E160AS-E 3.4.1 Short Short short-circuit between V V during the device OFF-state. Small or no current is delivered by the current sense SENSEH during the ON-state depending on the nature of the short-circuit. ...
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Application information 3.5 Maximum demagnetization energy (V Figure 34. Maximum turn-off current versus inductance (for each channel) 100 10 1 0,1 0 150 °C single pulse jstart 100 °C repetitive pulse jstart C: T ...
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VN5E160AS-E 4 Package and PCB thermal data 4.1 SO-8 thermal data Figure 35. SO-8 PC board 1. Layout condition of R PCB thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out ...
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Package and PCB thermal data Figure 37. SO-8 thermal impedance junction ambient single pulse ZTH (°C/W) 1000 100 10 1 0.1 0.0001 0.001 Equation 5: pulse calculation formula where δ Figure 38. Thermal fitting model of ...
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VN5E160AS-E Table 15. Thermal parameters Area/island (cm R1 (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/° Footprint 1 ...
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Package and packing information 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions ...
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VN5E160AS-E Table 16. SO-8 mechanical data Dim Package and packing information mm. Min. Typ. 0.1 0.65 0.35 0.19 0.25 45 (typ.) 4.8 5.8 ...
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Package and packing information 5.3 Packing information Figure 40. SO-8 tube shipment (no suffix) Figure 41. SO-8 tape and reel shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape ...
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... VN5E160AS-E 6 Order codes Table 17. Device summary Package SO-8 Order codes Tube VN5E160AS-E Doc ID 15609 Rev 2 Order codes Tape and reel VN5E160ASTR-E 35/37 ...
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Revision history 7 Revision history Table 18. Document revision history Date Revision 28-Apr-2009 25-Jan-2010 36/37 1 Initial release. 2 Updated Table 10: Openload detection (8 V < VCC < 18 Doc ID 15609 Rev 2 VN5E160AS-E Changes V). ...
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... VN5E160AS-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...