VNS1NV04D STMicroelectronics, VNS1NV04D Datasheet
VNS1NV04D
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VNS1NV04D Summary of contents
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... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM INPUT1 GATE CONTROL ...
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... VNS1NV04D ABSOLUTE MAXIMUM RATING Symbol V Drain-source Voltage (V DSn V Input Voltage INn I Input Current INn R Minimum Input Series Impedance IN MINn I Drain Current Dn I Reverse DC Output Current Rn V Electrostatic Discharge (R=1.5K , C=100pF) ESD1 V Electrostatic Discharge on output pins only (R=330 , C=150pF) ESD2 P Total Dissipation at T ...
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... I =2mA =1mA =0V =1mA IN I =-1mA IN V =13V; V =0V; T =25° =25V Test Conditions V =5V; I =0.5A 25° =5V; I =0. VNS1NV04D Value Unit 30 °C/W 80(*) °C/W Min Typ Max Unit 0.5 2.5 V 100 150 -1.0 -0 Min Typ Max Unit 250 m 500 m 3/14 1 ...
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... VNS1NV04D ELECTRICAL CHARACTERISTICS (continued) (T DYNAMIC Symbol Parameter Forward g (*) fs Transconductance C Output Capacitance OSS SWITCHING Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) ...
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... I ISS Additional features of this device are ESD protection according to the Human Body model reach the and the ability to be driven from a TTL Logic circuit. VNS1NV04D > jsh through gf , the INPUT pin will fall to 0V the ...
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... VNS1NV04D Figure 1: Switching Time Test Circuit for Resistive Load d(on) V gen Figure 2: Test Circuit for Diode Recovery Times I OMNIFET 330 6/ gen V gen 90 10% t d(off FAST DIODE gen I OMNIFET V gen t t L=100uH 8.5 ...
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... Figure 3: Unclamped Inductive Load Test Circuits R GEN Figure 5: Input Charge Test Circuit GEN Figure 4: Unclamped Inductive Waveforms ND8003 VNS1NV04D 7/14 1 ...
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... VNS1NV04D Source-Drain Diode Forward Characteristics Vsd (mV) 1000 950 Vin=0V 900 850 800 750 700 (A) Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) 500 Tj=150ºC 450 400 350 300 Tj=25ºC 250 200 Tj=-40ºC 150 100 3.5 4 4.5 5 5.5 ...
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... Turn off drain source voltage slope dv/dt(V/us) 350 300 250 200 150 100 VNS1NV04D Tj=25ºC Vds=13.5V Tj=150ºC Tj=-40ºC 2 2.5 3 3.5 4 4.5 2.25 2.75 3.25 3.75 4.25 4.75 Vin(V) Vin=3.5V Vdd=15V Id=1.5A 500 ...
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... VNS1NV04D Turn Off Drain-Source Voltage Slope dv/dt(V/us) 350 300 Vin=3.5V 250 Vdd=15V Id=0.5A 200 150 100 500 1000 1500 Rg(ohm) Switching Time Resistive Load t(us) 2 1.75 td(off) Vdd=15V 1.5 Id=0.5A Vin=5V 1.25 1 0.75 0.5 0. 250 500 750 1000 1250 1500 1750 2000 2250 2500 ...
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... Tc (ºC) Step Response Current Limit Tdlim(us) 2.4 2.3 Vin=5V Rg=330ohm 2.2 2 Vdd(V) Voltage Vs. Normalized Temperature Ilim (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 125 150 175 -50 - VNS1NV04D Current Limit Vs. Junction Vin=5V Vds=13V 100 125 150 175 Tc (ºC) 11/14 ...
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... VNS1NV04D DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 12/14 SO-8 MECHANICAL DATA mm. TYP MAX. MIN. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 1.27 3.81 4.0 0.14 1.27 0.015 ...
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... Bulk Q.ty Tube length (± 0. (± 0.1) All dimensions are in mm 1.5 1.5 5.5 4.5 2 End Top No components cover 500mm min tape VNS1NV04D 100 2000 532 3.2 6 0.6 REEL DIMENSIONS Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± -0) 12 ...
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... VNS1NV04D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...