VNS1NV04D-E STMicroelectronics, VNS1NV04D-E Datasheet

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VNS1NV04D-E

VNS1NV04D-E
Manufacturer Part Number	VNS1NV04D-E
Description	MOSFET 2N-CH 40V 1.7A 8-SOIC
Manufacturer	STMicroelectronics
Series	OMNIFET II™
Type	Low Side
VNS1NV04D-E datasheets	1. VNS1NV04D13TR.pdf (14 pages)

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Specifications of VNS1NV04D-E
Input Type	Non-Inverting	Number Of Outputs	2
On-state Resistance	250 mOhm	Current - Peak Output	1.7A
Mounting Type	Surface Mount	Package / Case	8-SOIC (3.9mm Width)
Switch Type	Low Side	Power Switch Family	VNS1NV04D
Power Switch On Resistance	250mOhm	Output Current	2.6A
Mounting	Surface Mount	Package Type	SO
Operating Temperature (min)	-40C	Operating Temperature (max)	150C
Operating Temperature Classification	Automotive	Pin Count	8
Power Dissipation	4000W	Transistor Polarity	N-Channel
Resistance Drain-source Rds (on)	250 m Ohms	Drain-source Breakdown Voltage	40 V
Continuous Drain Current	1.7 A	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Minimum Operating Temperature	- 40 C
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Voltage - Supply	-
Operating Temperature	-	Current - Output / Channel	-
Other names	497-5787-5

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FULLY AUTOPROTECTED POWER MOSFET

TYPE

DS(on)

VNS1NV04D

250 m (*)

1.7 A (*)

(*) Per each device

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

DIAGNOSTIC FEEDBACK THROUGH INPUT

ESD PROTECTION

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNS1NV04D is a device formed by two

monolithic OMNIFET II chips housed in a

standard SO-8 package. The OMNIFET II are

designed in STMicroelectronics VIPower M0-3

BLOCK DIAGRAM

INPUT1

GATE

CONTROL

OVER

TEMPERATURE

February 2003

lim

clamp

40 V (*)

Technology: they are intended for replacement of

standard Power MOSFETS from DC up to 50KHz

applications. Built in thermal shutdown, linear

current limitation and overvoltage clamp protects

the chip in harsh environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

DRAIN1

DRAIN2

OVERVOLTAGE

CLAMP

LINEAR

CURRENT

LIMITER

SOURCE1

SOURCE2

VNS1NV04D

“OMNIFET II”:

SO-8

OVERVOLTAGE

CLAMP

GATE

CONTROL

LINEAR

CURRENT

OVER

LIMITER

TEMPERATURE

INPUT2

1/14

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VNS1NV04D-E Summary of contents
Page 1 ... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM INPUT1 GATE CONTROL ... Page 2 ... VNS1NV04D ABSOLUTE MAXIMUM RATING Symbol V Drain-source Voltage (V DSn V Input Voltage INn I Input Current INn R Minimum Input Series Impedance IN MINn I Drain Current Dn I Reverse DC Output Current Rn V Electrostatic Discharge (R=1.5K , C=100pF) ESD1 V Electrostatic Discharge on output pins only (R=330 , C=150pF) ESD2 P Total Dissipation at T ... Page 3 ... I =2mA =1mA =0V =1mA IN I =-1mA IN V =13V; V =0V; T =25° =25V Test Conditions V =5V; I =0.5A 25° =5V; I =0. VNS1NV04D Value Unit 30 °C/W 80() °C/W Min Typ Max Unit 0.5 2.5 V 100 150 -1.0 -0 Min Typ Max Unit 250 m 500 m 3/14 1 ... Page 4 ... VNS1NV04D ELECTRICAL CHARACTERISTICS (continued) (T DYNAMIC Symbol Parameter Forward g () fs Transconductance C Output Capacitance OSS SWITCHING Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) ... Page 5 ... I ISS Additional features of this device are ESD protection according to the Human Body model reach the and the ability to be driven from a TTL Logic circuit. VNS1NV04D > jsh through gf , the INPUT pin will fall to 0V the ... Page 6 ... VNS1NV04D Figure 1: Switching Time Test Circuit for Resistive Load d(on) V gen Figure 2: Test Circuit for Diode Recovery Times I OMNIFET 330 6/ gen V gen 90 10% t d(off FAST DIODE gen I OMNIFET V gen t t L=100uH 8.5 ... Page 7 ... Figure 3: Unclamped Inductive Load Test Circuits R GEN Figure 5: Input Charge Test Circuit GEN Figure 4: Unclamped Inductive Waveforms ND8003 VNS1NV04D 7/14 1 ... Page 8 ... VNS1NV04D Source-Drain Diode Forward Characteristics Vsd (mV) 1000 950 Vin=0V 900 850 800 750 700 (A) Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) 500 Tj=150ºC 450 400 350 300 Tj=25ºC 250 200 Tj=-40ºC 150 100 3.5 4 4.5 5 5.5 ... Page 9 ... Turn off drain source voltage slope dv/dt(V/us) 350 300 250 200 150 100 VNS1NV04D Tj=25ºC Vds=13.5V Tj=150ºC Tj=-40ºC 2 2.5 3 3.5 4 4.5 2.25 2.75 3.25 3.75 4.25 4.75 Vin(V) Vin=3.5V Vdd=15V Id=1.5A 500 ... Page 10 ... VNS1NV04D Turn Off Drain-Source Voltage Slope dv/dt(V/us) 350 300 Vin=3.5V 250 Vdd=15V Id=0.5A 200 150 100 500 1000 1500 Rg(ohm) Switching Time Resistive Load t(us) 2 1.75 td(off) Vdd=15V 1.5 Id=0.5A Vin=5V 1.25 1 0.75 0.5 0. 250 500 750 1000 1250 1500 1750 2000 2250 2500 ... Page 11 ... Tc (ºC) Step Response Current Limit Tdlim(us) 2.4 2.3 Vin=5V Rg=330ohm 2.2 2 Vdd(V) Voltage Vs. Normalized Temperature Ilim (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 125 150 175 -50 - VNS1NV04D Current Limit Vs. Junction Vin=5V Vds=13V 100 125 150 175 Tc (ºC) 11/14 ... Page 12 ... VNS1NV04D DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 12/14 SO-8 MECHANICAL DATA mm. TYP MAX. MIN. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 1.27 3.81 4.0 0.14 1.27 0.015 ... Page 13 ... Bulk Q.ty Tube length (± 0. (± 0.1) All dimensions are in mm 1.5 1.5 5.5 4.5 2 End Top No components cover 500mm min tape VNS1NV04D 100 2000 532 3.2 6 0.6 REEL DIMENSIONS Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± -0) 12 ... Page 14 ... VNS1NV04D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

VNS1NV04D-E Summary of contents

Page 1
... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM INPUT1 GATE CONTROL ...
Page 2
... VNS1NV04D ABSOLUTE MAXIMUM RATING Symbol V Drain-source Voltage (V DSn V Input Voltage INn I Input Current INn R Minimum Input Series Impedance IN MINn I Drain Current Dn I Reverse DC Output Current Rn V Electrostatic Discharge (R=1.5K , C=100pF) ESD1 V Electrostatic Discharge on output pins only (R=330 , C=150pF) ESD2 P Total Dissipation at T ...
Page 3
... I =2mA =1mA =0V =1mA IN I =-1mA IN V =13V; V =0V; T =25° =25V Test Conditions V =5V; I =0.5A 25° =5V; I =0. VNS1NV04D Value Unit 30 °C/W 80(*) °C/W Min Typ Max Unit 0.5 2.5 V 100 150 -1.0 -0 Min Typ Max Unit 250 m 500 m 3/14 1 ...
Page 4
... VNS1NV04D ELECTRICAL CHARACTERISTICS (continued) (T DYNAMIC Symbol Parameter Forward g (*) fs Transconductance C Output Capacitance OSS SWITCHING Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) ...
Page 5
... I ISS Additional features of this device are ESD protection according to the Human Body model reach the and the ability to be driven from a TTL Logic circuit. VNS1NV04D > jsh through gf , the INPUT pin will fall to 0V the ...
Page 6
... VNS1NV04D Figure 1: Switching Time Test Circuit for Resistive Load d(on) V gen Figure 2: Test Circuit for Diode Recovery Times I OMNIFET 330 6/ gen V gen 90 10% t d(off FAST DIODE gen I OMNIFET V gen t t L=100uH 8.5 ...
Page 7
... Figure 3: Unclamped Inductive Load Test Circuits R GEN Figure 5: Input Charge Test Circuit GEN Figure 4: Unclamped Inductive Waveforms ND8003 VNS1NV04D 7/14 1 ...
Page 8
... VNS1NV04D Source-Drain Diode Forward Characteristics Vsd (mV) 1000 950 Vin=0V 900 850 800 750 700 (A) Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) 500 Tj=150ºC 450 400 350 300 Tj=25ºC 250 200 Tj=-40ºC 150 100 3.5 4 4.5 5 5.5 ...
Page 9
... Turn off drain source voltage slope dv/dt(V/us) 350 300 250 200 150 100 VNS1NV04D Tj=25ºC Vds=13.5V Tj=150ºC Tj=-40ºC 2 2.5 3 3.5 4 4.5 2.25 2.75 3.25 3.75 4.25 4.75 Vin(V) Vin=3.5V Vdd=15V Id=1.5A 500 ...
Page 10
... VNS1NV04D Turn Off Drain-Source Voltage Slope dv/dt(V/us) 350 300 Vin=3.5V 250 Vdd=15V Id=0.5A 200 150 100 500 1000 1500 Rg(ohm) Switching Time Resistive Load t(us) 2 1.75 td(off) Vdd=15V 1.5 Id=0.5A Vin=5V 1.25 1 0.75 0.5 0. 250 500 750 1000 1250 1500 1750 2000 2250 2500 ...
Page 11
... Tc (ºC) Step Response Current Limit Tdlim(us) 2.4 2.3 Vin=5V Rg=330ohm 2.2 2 Vdd(V) Voltage Vs. Normalized Temperature Ilim (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 125 150 175 -50 - VNS1NV04D Current Limit Vs. Junction Vin=5V Vds=13V 100 125 150 175 Tc (ºC) 11/14 ...
Page 12
... VNS1NV04D DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 12/14 SO-8 MECHANICAL DATA mm. TYP MAX. MIN. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 1.27 3.81 4.0 0.14 1.27 0.015 ...
Page 13
... Bulk Q.ty Tube length (± 0. (± 0.1) All dimensions are in mm 1.5 1.5 5.5 4.5 2 End Top No components cover 500mm min tape VNS1NV04D 100 2000 532 3.2 6 0.6 REEL DIMENSIONS Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± -0) 12 ...
Page 14
... VNS1NV04D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

VNS1NV04D-E

VNS1NV04D-E

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Specifications of VNS1NV04D-E

Related parts for VNS1NV04D-E

VNS1NV04D-E Summary of contents

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