L6206D STMicroelectronics, L6206D Datasheet - Page 8

IC DRVR FULL BRIDGE DUAL 24SOIC

L6206D

Manufacturer Part Number
L6206D
Description
IC DRVR FULL BRIDGE DUAL 24SOIC
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet

Specifications of L6206D

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
300 mOhm
Current - Output / Channel
2.8A
Current - Peak Output
5.6A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
24-SOIC (7.5mm Width)
Operating Supply Voltage
8 V to 52 V
Supply Current
0.01 A
Mounting Style
SMD/SMT
Motor Type
Full Bridge
No. Of Outputs
4
Output Current
2.8A
Supply Voltage Range
8V To 52V
Driver Case Style
SO
No. Of Pins
24
Operating Temperature Range
-40°C To +150°C
Svhc
No SVHC
Rohs Compliant
Yes
For Use With
497-4135 - EVAL BOARD FOR L6206 SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3999-5
497-4210-5
497-4210-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6206D
Manufacturer:
ST
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Part Number:
L6206D
Manufacturer:
ST
Quantity:
20 000
Part Number:
L6206D013TR
Manufacturer:
ST
0
L6206
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6206 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rd-
son=0.3ohm (typical value @ 25°C), with intrinsic
fast freewheeling diode. Cross conduction protection
is achieved using a dead time (td = 1 s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped (Vboot)
supply is obtained through an internal Oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output
(VCP) is a square wave at 600kHz (typical) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Components
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1
CMOS and uC compatible logic inputs. The internal
structure is shown in Fig. 4. Typical value for turn-on
and turn-off thresholds are respectively Vthon=1.8V
and Vthoff = 1.3V.
Pins EN
Overcurrent and Thermal protection by connecting
them respectively to the outputs OCD
which are open-drain outputs. If that type of connec-
tion is chosen, some care needs to be taken in driving
8/23
C
C
R
D1
D2
BOOT
P
P
A
A
VCP
, IN2
and EN
Values
D1
R
C
P
P
D2
A
, IN1
VBOOT
B
are commonly used to implement
C
B
BOOT
, IN2
VS
B
220nF
10nF
100
1N4148
1N4148
A
, EN
VS
B
A
and EN
D01IN1328
A
V
S
and OCD
B
are TTL/
B
,
these pins. Two configurations are shown in Fig. 5
and Fig. 6. If driven by an open drain (collector) struc-
ture, a pull-up resistor R
connected as shown in Fig. 5. If the driver is a stan-
dard Push-Pull structure the resistor R
pacitor C
resistor R
2.2k to 180K . Recommended values for R
C
mation on selecting the values is found in the Over-
current Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. EN
Figure 6. EN
TRUTH TABLE
X
High Z
COLLECTOR
PUSH-PULL
EN
OUTPUT
OUTPUT
OPEN
EN
H
H
H
H
L
are respectively 100K
= Don't care
EN
= High Impedance Output
Driving
EN
INPUTS
are connected as shown in Fig. 6. The
R
should be chosen in the range from
A
A
IN1
EN
5V
X
H
H
L
L
and EN
and EN
C
R
EN
EN
C
PROTECTION
EN
OCD
OCD
ESD
EN
A
EN
B
or OCD
A
B
A
IN2
EN
X
H
H
or EN
or OCD
A
L
L
Pins Open Collector
Pins Push-Pull Driving
or EN
and a capacitor C
B
B
5V
and 5.6nF. More infor-
B
B
D01IN1329
High Z
OUT1
GND
GND
Vs
Vs
OUTPUTS
EN
and the ca-
5V
5V
High Z
OUT2
GND
GND
D02IN1355
EN
D02IN1356
Vs
Vs
EN
and
are

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