ISP75N Infineon Technologies, ISP75N Datasheet
ISP75N
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ISP75N Summary of contents
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Smart Lowside Power Switch For Industrial Applications Data Sheet V 1.4 Features • Lead free • Logic Level Input • Input protection (ESD) • Thermal shutdown with auto restart • Overload protection • Short circuit protection • Overvoltage protection • ...
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... ISP75N Logic dV/dt IN limitation Over temperature Protection ESD Figure 1 Block Diagram Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1 IN Input; activates output and supplies internal logic 2 DRAIN Output to the load 3 + TAB SOURCE Ground; pin3 and TAB are internally connected Data Sheet V 1 ...
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Circuit Description The ISP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions designed for all kind of resistive and inductive ...
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Absolute Maximum Ratings = 25 °C, unless otherwise specified T j Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ ≤ 10V ...
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Device on epoxy pcb 40 mm × × 1.5 mm with Electrical Characteristics = 25 °C, unless otherwise specified T j Parameter Static Characteristics Drain source clamp voltage Off state drain current Input threshold voltage ...
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Electrical Characteristics (cont’ °C, unless otherwise specified T j Parameter V Turn-off time to 10% IN Slew rate 50% Slew rate off 50 to 70% 2) Protection Functions Thermal overload trip temperature Thermal hysteresis Unclamped ...
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EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Max. 1) ...
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... Broadband Artificial Network (short: BAN) consists of the same choke (5µH at 1MHz) and the same 150 Ohm-matching measurement for defined de coupling and high reproducibility. 8 HITFET Susceptibility at DC-ON/OFF bb 10 100 f / MHz ISP75N IN DRAIN SOURCE network as for ISP 75N Limit OUT, ON OUT, OFF OUT, PWM 1000 R L ...
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... Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. Drain V AZ Power Source DMOS Figure 7 Inductive and Over voltage Output Clamp Data Sheet V 1 Px.1 V GND Figure 8 LOAD HITFET ISP 75N V BB ISP75N SOURCE Application Circuit 2008-04-14 ...
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Timing diagrams 0.9 Figure 9 Switching a Resistive Load DS(AZ Figure 10 Switching an Inductive Load Data Sheet V 1 ...
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Max. allowable power dissipation tot Amb 1 1,2 0,8 0 On-state resistance 0.7 ...
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Typ. on-state resistance = 25 ° 0 Ω Typ. ...
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Package Outlines HITFET 6.5 ±0 ±0.1 1 0.7 ±0.1 4.6 0. Figure 12 PG-SOT223-4 You can find all of our packages, sorts of packing and others in our Infineon Internet Page: http://www.infineon.com/packages. Data Sheet Package ...
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Revision History Version Date Changes V1.4 2008-04-14 package naming updated to PG-SOT223-4 V1.3 2006-11-20 changed the term “industry” to “industrial” to make it clear that this device is not targeted for automotive use V1.2 2006-08-08 added Junction Temperature in ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...