ISP75N

Manufacturer Part NumberISP75N
DescriptionIC SWITCH HISIDE SMART SOT223-4
ManufacturerInfineon Technologies
SeriesHITFET®
TypeLow Side
ISP75N datasheet
 


Specifications of ISP75N

Input TypeNon-InvertingNumber Of Outputs1
On-state Resistance490 mOhmCurrent - Output / Channel700mA
Current - Peak Output1.5AOperating Temperature-30°C ~ 85°C
Mounting TypeSurface MountPackage / CaseSOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS StatusLead free / RoHS CompliantVoltage - Supply-
Other namesSP000292457  
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Smart Lowside Power Switch
For Industrial Applications
Data Sheet V 1.4
Features
• Lead free
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
Application
• All kinds of resistive, inductive and capacitive loads in industrial applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology, protected by embedded
protection functions.
Type
HITFET
ISP 75N
Product Summary
Parameter
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
Data Sheet V 1.4
Ordering Code
on request
Symbol
V
DS
R
DS(ON)
I
D(lim)
I
D(Nom)
E
AS
1
HITFET
ISP 75N
Package
PG-SOT223-4
Value
Unit
60
V
550
mΩ
1
A
0.7
A
550
mJ
2008-04-14

ISP75N Summary of contents

  • Page 1

    Smart Lowside Power Switch For Industrial Applications Data Sheet V 1.4 Features • Lead free • Logic Level Input • Input protection (ESD) • Thermal shutdown with auto restart • Overload protection • Short circuit protection • Overvoltage protection • ...

  • Page 2

    ... ISP75N Logic dV/dt IN limitation Over temperature Protection ESD Figure 1 Block Diagram Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1 IN Input; activates output and supplies internal logic 2 DRAIN Output to the load 3 + TAB SOURCE Ground; pin3 and TAB are internally connected Data Sheet V 1 ...

  • Page 3

    Circuit Description The ISP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions designed for all kind of resistive and inductive ...

  • Page 4

    Absolute Maximum Ratings = 25 °C, unless otherwise specified T j Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ ≤ 10V ...

  • Page 5

    Device on epoxy pcb 40 mm × × 1.5 mm with Electrical Characteristics = 25 °C, unless otherwise specified T j Parameter Static Characteristics Drain source clamp voltage Off state drain current Input threshold voltage ...

  • Page 6

    Electrical Characteristics (cont’ °C, unless otherwise specified T j Parameter V Turn-off time to 10% IN Slew rate 50% Slew rate off 50 to 70% 2) Protection Functions Thermal overload trip temperature Thermal hysteresis Unclamped ...

  • Page 7

    EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Max. 1) ...

  • Page 8

    ... Broadband Artificial Network (short: BAN) consists of the same choke (5µH at 1MHz) and the same 150 Ohm-matching measurement for defined de coupling and high reproducibility. 8  HITFET Susceptibility at DC-ON/OFF bb 10 100 f / MHz ISP75N IN DRAIN SOURCE network as for ISP 75N Limit OUT, ON OUT, OFF OUT, PWM 1000 R L ...

  • Page 9

    ... Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. Drain V AZ Power Source DMOS Figure 7 Inductive and Over voltage Output Clamp Data Sheet V 1 Px.1 V GND Figure 8 LOAD  HITFET ISP 75N V BB ISP75N SOURCE Application Circuit 2008-04-14 ...

  • Page 10

    Timing diagrams 0.9 Figure 9 Switching a Resistive Load DS(AZ Figure 10 Switching an Inductive Load Data Sheet V 1 ...

  • Page 11

    Max. allowable power dissipation tot Amb 1 1,2 0,8 0 On-state resistance 0.7 ...

  • Page 12

    Typ. on-state resistance = 25 ° 0 Ω Typ. ...

  • Page 13

    Package Outlines HITFET 6.5 ±0 ±0.1 1 0.7 ±0.1 4.6 0. Figure 12 PG-SOT223-4 You can find all of our packages, sorts of packing and others in our Infineon Internet Page: http://www.infineon.com/packages. Data Sheet Package ...

  • Page 14

    Revision History Version Date Changes V1.4 2008-04-14 package naming updated to PG-SOT223-4 V1.3 2006-11-20 changed the term “industry” to “industrial” to make it clear that this device is not targeted for automotive use V1.2 2006-08-08 added Junction Temperature in ...

  • Page 15

    ... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...