ISP75N Infineon Technologies, ISP75N Datasheet - Page 3

• Manufacturer Part Number: ISP75N
• Description: IC SWITCH HISIDE SMART SOT223-4
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of ISP75N

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 490 mOhm
• Current - Output / Channel: 700mA
• Current - Peak Output: 1.5A
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Other names: SP000292457

Circuit Description
The ISP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic
level input, an open drain DMOS output stage and integrated protection functions. It is
designed for all kind of resistive and inductive loads (relays, solenoid) in industrial
applications.
Protection Functions
Note: The device provides embedded protection functions. Integrated protection
• Over voltage protection: An internal clamp limits the output voltage at
• Current limitation: By means of an internal current measurement the drain current is
• Over temperature and short circuit protection: This protection is based on sensing
The device is ESD protected according Human Body Model (4 kV) and load dump
protected (see Maximum Ratings).
Data Sheet V 1.4
60V) when inductive loads are switched off.
limited at
in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.
the chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150 °C. A
hysteresis of typ. 10 K enables an automatic restart by cooling.
functions are designed to prevent IC destruction under fault conditions described
in the data sheet. Fault conditions are considered as “outside” normal operation.
I
D(lim)
(1.4 - 1.5 A typ.). If the current limitation is active the device operates
3
HITFET
V

DS(AZ)
2008-04-14
ISP 75N
(min.