ISO1H801G Infineon Technologies, ISO1H801G Datasheet - Page 15

• Manufacturer Part Number: ISO1H801G
• Description: IC SWITCH HISIDE 8CH DSO-36
• Manufacturer: Infineon Technologies
• Series: ISOFACE™r
• Type: High Sider

Specifications of ISO1H801G

• Input Type: Parallel
• Number Of Outputs: 8
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 700mA
• Current - Peak Output: 1.4A
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DSO-36
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000260029

4.9
Parameter
at T
otherwise specified
Reverse voltage
R
R
Diode forward on voltage
IF = 1.25A, V
1) defined by P
2) not subject to production test, specified by design
4.10
Parameter
Measured from input terminals to output terminals,
unless otherwise specified
Rated dielectric isolation voltage V
Minimum external air gap (clearance)
Minimum external tracking (creepage)
Minimum Internal Gap
1) The parameter is not subject to production test, verified by characterization; Production Test with 1100V, 100ms duration
Note: For Qualification Report contact your local Infineon Technologies office!
Datasheet
GND
GND
j
= -25 ... 125°C, V
= 0 Ω
= 150 Ω
Reverse Voltage
Isolation and Safety-Related Specification
Dx
tot
= low, each channel
1)2)
bb
=15...30V, V
CC
=4.5...5.5V, unless
ISO
Symbol
-V
-V
15
Value
ON
0.01
bb
500
2.6
2.6
min.



Unit
V
mm
mm
mm
Limit Values
AC
typ.



Conditions
1 minute duration
shortest distance through air.
shortest distance path along body.
Insulation distance through
insulation
max.
1.2
45
1
Electrical Characteristics
Version 2.3, 2009-09-16
Unit Test Condition
V
1)
ISOFACE™
ISO1H801G