VN770P13TR STMicroelectronics, VN770P13TR Datasheet

VN770P13TR

Manufacturer Part Number

VN770P13TR

Description

IC RELAY SSR QUAD SMART 28-SSOP

Manufacturer

STMicroelectronics

Type

H Bridger

Datasheet

1.VN770P13TR.pdf (11 pages)

Specifications of VN770P13TR

Input Type

Non-Inverting

Number Of Outputs

On-state Resistance

160 mOhm

Current - Output / Channel

Voltage - Supply

5.5 V ~ 36 V

Operating Temperature

-40°C ~ 150°C

Mounting Type

Surface Mount

Package / Case

28-SOIC (7.5mm Width)

Supply Current

4 mA

Maximum Operating Temperature

85 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 40 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Peak Output

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Current page: 1 of 11
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* Total resistance of one side in bridge configuration

DESCRIPTION

The VN770P is a device formed by three

monolithic chips housed in a standard SO28

package: a double high side and two low side

switches. Both the double high side and low side

switches are made using STMicroelectronics

VIPower technology. This device is suitable to

drive a DC motor in a bridge configuration as well

as to be used as a quad switch for any low

voltage application. The dual high side switches

have built-in thermal shut-down to protect the

chip from over temperature and short circuit,

status output to provide indication for open load

in off and on state, overtemperature conditions

and stuck-on to V

two OMNIFET types (fully autoprotected Power

MOSFET in VIPower

built-in thermal shut-down, linear current limitation

and overvoltage clamping. Fault feedback for

thermal

monitoring the voltage at the input pin.

DUAL HIGH-SIDE SWITCH

From the falling edge of the input signal, the

status output, initially low

condition

on-state), will go back to a high state with a

different delay in case of overtemperature (tpovl)

and in case of open open load (

This feature allows to discriminate the nature of

the detected fault. To protect the device against

September 1998

VN770P

IDEAL AS A LOW VOLTAGE BRIDGE

LINEAR CURRENT LIMITATION

VERY LOW STAND-BY POWER

DISSIPATION

SHORT CIRCUIT PROTECTED

STATUS FLAG DIAGNOSTICS

OPEN DRAIN DIAGNOSTICS OUTPUT

INTEGRATED CLAMPING CIRCUITS

UNDER-VOLTAGE PROTECTION

ESD PROTECTION

T YPE

intervention

(overtemperature

0.270

DS( on)

FOR COMPLETE H BRIDGE CONFIGURATIONS

. The low side switches are

QUAD SMART POWER SOLID STATE RELAY

can

technology). They have

9 A

OUT

to signal a fault

tpol

) respectively.

detected

open

26 V

load

short circuit and over current condition, the

thermal protection turns the integrated Power

MOS off at a minimum junction temperature of

140

the switch is automatically turned on again. In

short circuit the protection reacts with virtually no

delay, the sensor (one for each channel) being

located inside each of the two Power MOS areas.

This positioning allows the device to operate with

one channel in automatic thermal cycling and the

other one on a normal load. An internal function

of the devices ensures the fast demagnetization

of inductive loads with a typical voltage (V

of -18V. This function allows to greatly reduces

the power dissipation according to the formula:

where f = switching frequency and

In this device if the GND pin is disconnected, with

off.

LOW-SIDE SWITCHES

During normal operation, the Input pin is

electrically connected to the gate of the internal

power MOSFET. The device then behaves like a

standard power MOSFET and can be used as a

switch from DC to 50 KHz. The only difference

from the user’s standpoint is that a small DC

current (I

supply the internal circuitry.

dem

demag

not exceeding 16V, both channel will switch

= 0.5 L

C. When this temperature returns to 125

= demagnetization voltage.

iss

) flows into the Input pin in order to

load

)

SO-28

[(V

VN770P

demag

)/V

demag

] f

1/11

)

Related parts for VN770P13TR

VN770P13TR Summary of contents

Page 1

... SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in a bridge configuration as well used as a quad switch for any low voltage application ...

Page 2

VN770P BLOCK DIAGRAM 2/11 ...

Page 3

CONNECTION DIAGRAM PIN FUNCTION No NAME 1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch) 2 INPUT 3 Input of Switch 3 (low-side switch N.C. Not Connected 5, 10, 19 Drain of Switches ...

Page 4

VN770P PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about ...

Page 5

ABSOLUTE MAXIMUM RATING (-40 HIGH SIDE SWITCH Symbol V Drain-Source Breakdown Voltage (BR)DSS I Output Current (cont. ) OUT I Reverse O utput Current R I Input Current Reverse Supply Voltage atus Current STAT ...

Page 6

VN770P ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) R Output internal i Im pedance SWITCHING Symbol Parameter t (^) Turn-on Delay Time Of d(on) Output Current t (^) Rise Time Of O utput r Current t ...

Page 7

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter I Open Load Current OL Level t St atus Delay povl t St atus Delay pol (*) In= Nominal current according to ISO definition for high side ...

Page 8

VN770P ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued Forward fs Transconductance C Output Capacitance os s SWITCHING (**) Symbol Parameter t Turn-on Delay Time d Rise Time r t Turn-off Delay Time d ...

Page 9

TYPICAL APPLICATION DIAGRAM VN770P 9/11 ...

Page 10

VN770P SO-28 MECHANICAL DATA DIM. MIN. TYP 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S 10/11 mm MAX. MIN. 2.65 0.30 0.004 0.49 0.013 0.32 ...

Page 11

... STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – ...

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