BTS5234G Infineon Technologies, BTS5234G Datasheet
BTS5234G
Specifications of BTS5234G
SP000014727
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BTS5234G Summary of contents
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Smart High-Side Power Switch PROFET Two Channels, 60 mΩ Automotive Power ...
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Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Smart High-Side Power Switch PROFET Product Summary The BTS 5234G is a dual channel high-side power switch in P-DSO-20-21 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device ...
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Protective Functions • Reverse battery protection without external components • Short circuit protection • Overload protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart at reduced current limitation • Over voltage protection without external resistor • ...
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Overview The BTS 5234G is a dual channel high-side power switch (two times 60 mΩ) in P-DSO-20-21 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function ...
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Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 V IN2 I IS1 I V IS2 IS1 V IS2 I SEN V SEN Figure 2 Terms Data Sheet Smart ...
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Pin Configuration 2.1 Pin Assignment BTS 5234G VBB GND IN1 IS1 IS2 IN2 SEN VBB Figure 3 Pin Configuration P-DSO-20-21 2.2 Pin Definitions and Functions Pin Symbol 4 IN1 7 IN2 5 IS1 6 IS2 8 SEN 17, 18 ...
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Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified ° Pos. Parameter Supply Voltage 3.1.1 Supply voltage 3.1.2 ...
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Unless otherwise specified ° Pos. Parameter Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamic temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM 1) R and L describe the complete circuit impedance including line, ...
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Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance R The on-state resistance T temperature . Figure 4 j The behavior ...
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A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...
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V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5234G. This energy can be calculated with following equation: ( ...
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Electrical Characteristics Unless otherwise specified: = -40 °C to +150 °C, typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel active all channels active 4.1.3 ...
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Unless otherwise specified: = -40 °C to +150 °C, typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Input ...
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Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed ...
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Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation P diss(rev) The reverse current through ...
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Electrical Characteristics Unless otherwise specified: = -40 °C to +150 °C , typical values Pos. Parameter Over Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive short circuit current limitation ...
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Diagnosis For diagnosis purpose, the BTS 5234G provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal k the load current (ratio ILIS occurs. In case of open load in OFF-state, ...
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Table 1 Truth Table Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over Temperature Short Circuit Open Load L = Low Level High Level high impedance, potential depends on leakage ...
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In case of over current as well as over temperature, the current sense signal is switched off result, one threshold is enough to distinguish between normal and faulty operation. Open load and over load can be differentiated by ...
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For open load diagnosis in off state an external output pull-up resistor ( recommended. For calculation of the pull-up resistor, just the external leakage current I and the open load threshold voltage leakage I defines the leakage current in the ...
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Electrical Characteristics Unless otherwise specified: = -40 °C to +150 ° typical values Pos. Parameter Open Load at OFF-State 4.3.1 Open load detection threshold ...
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Unless otherwise specified: = -40 °C to +150 ° typical values Pos. Parameter 4.3.9 Current sense leakage, while diagnosis disabled 4.3.10 Current sense settling static ...
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Package Outlines BTS 5234G P-DSO-20-21 (Plastic Dual Small Outline Package) 1.27 +0.15 2) 0.35 20 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max ...
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Revision History Version Date Changes V1.0 04-01-23 initial version Data Sheet Smart High-Side Power Switch 25 BTS 5234G Revision History 2004-01-23 ...
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Data Sheet Smart High-Side Power Switch 26 BTS 5234G Revision History V1.0, 2004-01-23 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...