TEA1612T/N1,518 NXP Semiconductors, TEA1612T/N1,518 Datasheet

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TEA1612T/N1,518

Manufacturer Part Number
TEA1612T/N1,518
Description
IC RESONANT CONV CTRLR 24SOIC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TEA1612T/N1,518

Applications
Resonant Converter Controller
Voltage - Supply
11 V ~ 13 V
Current - Supply
2mA
Operating Temperature
-25°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
24-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Input
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
935286866518
1. General description
2. Features
The TEA1612T is a monolithic integrated circuit implemented in a high-voltage double
Diffused Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage
controller for a zero-voltage switching resonant converter. The IC provides the drive
function for two discrete power MOSFETs in a half-bridge configuration. It also includes a
level-shift circuit, an oscillator with an accurately-programmable frequency range, a
latched shut-down function, burst mode operation and a transconductance error amplifier.
The oscillator signal passes through a divide-by-two flip-flop before being fed to the output
drivers in order to guarantee an accurate 50 % switching duty factor.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
I
I
I
I
I
I
I
Fig 1.
TEA1612T
Zero voltage switching resonant converter controller
Rev. 01 — 24 September 2009
Adjustable burst mode operation at low loads for low standby power
Integrated high voltage level-shift function
Integrated high voltage bootstrap diode
Low start-up current
Adjustable non-overlap time
Internal Over Temperature Protection (OTP)
Over Current Protection (OCP) that activates a shut-down timer
Basic configuration
ground
signal
TEA1612T
V DD
power ground
V
drv(hs)
bridge voltage
supply
(high side)
MOSFET
SWITCH
CIRCUIT
BRIDGE
HALF-
CONVERTER
RESONANT
014aaa825
Product data sheet

Related parts for TEA1612T/N1,518

TEA1612T/N1,518 Summary of contents

Page 1

TEA1612T Zero voltage switching resonant converter controller Rev. 01 — 24 September 2009 1. General description The TEA1612T is a monolithic integrated circuit implemented in a high-voltage double Diffused Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage ...

Page 2

... NXP Semiconductors I Soft start timing pin I Brown Out (BO) detection I Transconductance error amplifier for ultra high-ohmic regulation feedback I Latched shut-down circuit for Over Voltage Protection (OVP) I Adjustable minimum and maximum frequencies I Under Voltage Lock Out (UVLO) I Fault latch reset input I Wide (max supply voltage range ...

Page 3

... NXP Semiconductors 5. Block diagram 16 VAUX 13 SGND 1 PFC RESET 23 HYST 24 BURST 2.5 V 2.7 V start-up 5 CSS Fig 2. Block diagram TEA1612T_1 Product data sheet Zero voltage switching resonant converter controller 10k 12.6 V LEVEL SHIFTER SUPPLY 5 V LOGIC 1 600 VCO IRS VREF Rev. 01 — 24 September 2009 ...

Page 4

... NXP Semiconductors 6. Pinning information 6.1 Pinning Fig 3. 6.2 Pin description Table 2. Symbol PFC BO P VCO CSS CT OCP PGND n. VDD(FLOAT) SGND VAUX RESET IFS CF IRS SD TEA1612T_1 Product data sheet Zero voltage switching resonant converter controller 1 PFC VCO 4 5 CSS 6 CT OCP 7 PGND 8 n ...

Page 5

... NXP Semiconductors Table 2. Symbol VREF HYST BURST [1] Provided as a high voltage spacer 7. Functional description 7.1 Start-up When the applied voltage at pin V switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the bootstrap capacitor (C used for the fl ...

Page 6

... NXP Semiconductors 7.2 Oscillator The internal oscillator is a current-controlled oscillator that generates a sawtooth output. The frequency of the sawtooth is determined by the external capacitor C flowing into the IFS and IRS pins. The minimum frequency and the non-overlap time are set by the capacitor C resistors R The oscillator frequency is exactly twice the bridge frequency to achieve an accurate 50 % duty factor ...

Page 7

... NXP Semiconductors The R f(min) charge current (rising slope) of the C frequency is defined by this minimum charge current ( IRS1 t = IRS1 f osc min f bridge min 7.5 Maximum frequency resistor The output voltage is regulated by changing the frequency of the half-bridge converter. The maximum frequency is determined by the R the error amplifi ...

Page 8

... NXP Semiconductors Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the non-overlap time and the oscillator frequency show a decay. The frequency of the oscillator depends on the value of capacitor C voltage swing V frequencies the accuracy decreases due to delays in the circuit. Fig 6. ...

Page 9

... NXP Semiconductors At start-up the soft start capacitor is charged to V about the maximum frequency. After start-up the external soft start capacitor is discharged by I place via R frequency sweep rate. When the circuit comes into regulation, the error amplifier output controls the VCO pin voltage and the CSS voltage sweeps down further to zero volt ...

Page 10

... NXP Semiconductors 7.12 Overcurrent protection and timer The OCP input continuously compares the voltage on pin OCP with V OCP pin voltage is higher than V during the next full CF cycle or else the timer capacitor will be discharged with I In case the CT voltage exceeds V The timer capacitor will be discharged with I after which a soft start cycle is started ...

Page 11

... NXP Semiconductors 8. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Supply Voltages V drv(hs aux Voltages on pins P, SD, RESET, OCP, BO, PFC, BURST, HYST and Currents I IFS I IRS I VREF Power and temperature P tot T amb T stg Handling V ESD ...

Page 12

... NXP Semiconductors 10. Characteristics Table 5. Characteristics All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter High voltage pins VDD(FLOAT), GH and SH I leakage current leak Supply pins V ...

Page 13

... NXP Semiconductors Table 5. Characteristics …continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter f maximum bridge frequency bridge(max) V LOW-level trip voltage trip(L) V HIGH-level trip voltage ...

Page 14

... NXP Semiconductors Table 5. Characteristics …continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; V and tested using the circuit shown in amb Symbol Parameter Reset pin V reset voltage rst V hysteresis of reset voltage rst(hys) I reset input current ...

Page 15

... NXP Semiconductors 11. Application information VAUX SGND 13 on/off PFC 1 PFC controller BO 2 RESET 17 Reset VREF HYST 23 BURST 2.7 V 2.5 V start-up 5 CSS C SS Fig 7. Application diagram TEA1612T_1 Product data sheet Zero voltage switching resonant converter controller C VDD 12.6 V TEA1612 LEVEL HIGH SIDE SUPPLY ...

Page 16

... NXP Semiconductors 12. Package outline SO24: plastic small outline package; 24 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 mm 2.65 0.25 0.1 2.25 0.012 0.096 inches 0.1 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 17

... NXP Semiconductors 13. Revision history Table 6. Revision history Document ID Release date TEA1612T_1 20090924 TEA1612T_1 Product data sheet Zero voltage switching resonant converter controller Data sheet status Change notice Product data sheet - Rev. 01 — 24 September 2009 TEA1612T Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 18

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 19

... NXP Semiconductors 16. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 5 7.1 Start-up 7.2 Oscillator 7.3 Non-overlap time resistor . . . . . . . . . . . . . . . . . 6 7.4 Minimum frequency resistor . . . . . . . . . . . . . . . 6 7.5 Maximum frequency resistor 7.6 Error amplifi ...

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