LM20145MHE/NOPB National Semiconductor, LM20145MHE/NOPB Datasheet - Page 4

• Manufacturer Part Number: LM20145MHE/NOPB
• Description: IC REG SYNC BUCK 5A ADJ 16-TSSOP
• Manufacturer: National Semiconductor
• Series: PowerWise®r
• Type: Step-Down (Buck)r

Specifications of LM20145MHE/NOPB

• Internal Switch(s): Yes
• Synchronous Rectifier: Yes
• Number Of Outputs: 1
• Voltage - Output: 0.8 ~ 5 V
• Current - Output: 5A
• Frequency - Switching: 250kHz ~ 750kHz
• Voltage - Input: 2.95 ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP Exposed Pad, 16-eTSSOP, 16-HTSSOP
• Power - Output: 2.6W
• For Use With: LM20145EVAL - BOARD EVAL 5A POWERWISE LM20145
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LM20145MHE

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Enable
Thermal Shutdown
Thermal Resistance
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, T
and the ambient temperature, T
maximum power dissipations of 2.6W is determined using T
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor to each pin.
Typical Performance Characteristics
(Coilcraft MSS1038), V
waveforms, and T
Symbol
V
T
V
SD_HYS
EN_HYS
T
IH_EN
θ
SD
JA
High-Side FET Resistance vs. Temperature
Efficiency vs. Load Current (V
Parameter
EN Pin turn-on Threshold
EN Pin Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Junction to Ambient
J
= 25°C for all others.
IN
= 5V, V
A
. The maximum allowable power dissipation at any ambient temperature is calculated using: P
OUT
= 1.2V, R
IN
LOAD
= 5V)
A
= 25°C, θ
30030731
30030757
= 1.2Ω, f
JA
= 38°C/W, and T
SW
Conditions
V
= 500 kHz, T
4
Unless otherwise specified: C
EN
Rising
J_MAX
Low-Side FET Resistance vs. Temperature
Efficiency vs. Load Current (V
A
= 125°C.
= 25°C for efficiency curves, loop gain plots and
J_MAX
, the junctions-to-ambient thermal resistance, θ
IN
= C
OUT
1.08
Min
D_MAX
= 100 µF, L = 1.5 µH
= (T
IN
1.18
Typ
= 3.3V)
160
66
10
38
J_MAX
30030730
30030758
– T
Max
1.28
A
)/θ
JA
. The
°C/W
Unit
mV
°C
°C
V
JA
,