HCPL-3150 Avago Technologies US Inc., HCPL-3150 Datasheet - Page 16

OPTOCOUPLER GATE DRIVE 0.6A 8DIP

HCPL-3150

Manufacturer Part Number
HCPL-3150
Description
OPTOCOUPLER GATE DRIVE 0.6A 8DIP
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HCPL-3150

Voltage - Isolation
3750Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
600mA
Propagation Delay High - Low @ If
300ns @ 7mA ~ 16mA
Current - Dc Forward (if)
25mA
Input Type
DC
Output Type
Open Collector
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
No. Of Channels
1
Isolation Voltage
3.75kV
Optocoupler Output Type
Gate Drive
Input Current
16mA
Output Voltage
30V
Opto Case Style
DIP
No. Of Pins
8
Propagation Delay Low-high
0.5µs
Common Mode Voltage Vcm
1500V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
516-1125-5

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θ
Figure 28a. Thermal Model.
The value of 4.25 mA for I
obtained by derating the I
at -40°C) to I
Since P
increased to reduce the HCPL-3150 power dissipation.
P
For Qg = 500 nC, from Figure 27, a value of E
gives a Rg = 41 Ω.
Thermal Model (HCPL-3150)
The steady state thermal model for the HCPL-3150 is
shown in Figure 28a. The thermal resistance values given
in this model can be used to calculate the tempera tures
at each node for a given operating condition. As shown
by the model, all heat generated flows through T
raises the case temperature T
T
is, therefore, determined by the designer. The value of
T
ments using a 2.5 x 2.5 inch PC board, with small traces
(no ground plane), a single HCPL-3150 soldered into
the center of the board and still air. The absolute maxi-
mum power dissipation derating specifica tions assume
a T
16
LC
O(SWITCHING MAX)
CA
CA
E
CA
= 391°C/W
SW(MAX)
depends on the conditions of the board design and
= 83°C/W was obtained from thermal measure-
value of 83°C/W.
O
T
JE
for this case is greater than P
θ
= 154 mW - 85 mW
= 69 mW
=
=
CC
LD
= P
max at 90°C (see Figure 7).
= 439°C/W
20 kHz
69 mW
P
O(MAX)
T
O(SWITCHINGMAX)
C
θ
CA
T
- P
A
f
= 83°C/W*
θ
O(BIAS)
T
DC
JD
CC
= 3.45 μJ
= 119°C/W
CC
in the previous equation was
max of 5 mA (which occurs
C
accordingly. The value of
O(MAX)
T
T
T
T
T
T
T
CA
T
DC
LD
CA
JD
LC
JE
, Rg must be
C
will depend on the board design and the placement of the part.
SW
= LED junction temperature
= detector IC junction temperature
= case temperature measured at the center of the package bottom
= LED-to-case thermal resistance
= LED-to-detector thermal resistance
= detector-to-case thermal resistance
= case-to-ambient thermal resistance
= 3.45 μJ
CA
which
From the thermal mode in Figure 28a the LED and detec-
tor IC junction temperatures can be expressed as:
T
T
Inserting the values for T
gives:
T
T
For example, given P
and T
T
T
T
layout and part placement (T
tion.
JE
JD
JE
JD
JE
JD
JE
= P
= P
= P
= P
and T
= P
= P
= 45 mW
= 45 mW
E
E
E
E
CA
E
E
x
x
x
x
x
(
313°C/W + P
(230°C/W + T
(49°C/W + T
132°C/W + P
(T
JD
= 83°C/W:
+ P
+ P
LC
T
should be limited to 125°C based on the board
||(T
LC
D
D
T
x
x
x
x
313°C/W + 250 m
132C/W + 250 m
+ T
(T
LD
LC
(
DC
+ T
x
DC
T
||(T
T
DC
+ T
D
DC
D
LC
CA
x
x
LD
132°C/W + T
) + T
CA
187°C/W + T
+ T
) + P
T
LD
E
+ T
) + P
LC
= 45 mW, P
+ T
DC
x
CA
LC
D
T
x
D
+ T
LC
) + T
)
DC
(104°C/W + T
x
CA
(49°C/W + T
and T
)
W
LD
W
CA
CA
A
x
A
) specific to the applica-
x
187°C/W + 70°C = 123°C
) + T
+ T
132°C/W + 70°C = 117°C
DC
O
CA
= 250 mW, T
A
shown in Figure 28
)
+ T
CA
CA
) + T
) + T
A
A
A
A
= 70°C

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