MT16VDDT6464AY-335K1 Micron Technology Inc, MT16VDDT6464AY-335K1 Datasheet - Page 2

• Manufacturer Part Number: MT16VDDT6464AY-335K1
• Description: MODULE DDR 512MB 167MHZ 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AY-335K1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.432A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2:
Table 3:
Table 4:
PDF: 09005aef80739fa5/Source:09005aef807397e5
DD16C64_128_256x64A.fm - Rev. E 8/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT16VDDT6464AG-40B__
MT16VDDT6464AY-40B__
MT16VDDT6464AG-335__
MT16VDDT6464AY-335__
MT16VDDT6464AG-262__
MT16VDDT6464AG-26A__
MT16VDDT6464AG-265__
MT16VDDT6464AY-265__
MT16VDDT12864AG-40B__
MT16VDDT12864AY-40B__
MT16VDDT12864AG-335__
MT16VDDT12864AY-335__
MT16VDDT12864AG-262__
MT16VDDT12864AG-265__
MT16VDDT12864AY-265__
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V32M8,
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V64M8,
2
2
Notes:
1. The data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT16VDDT6464AY-40BG4.
Module
Density
Module
Density
512MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1
1
256Mb DDR SDRAM
512Mb DDR SDRAM
256Mb (32 Meg x 8)
512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1K (A0–A9)
Configuration
Configuration
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
512MB
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
8K
2
Bandwidth
Bandwidth
Module
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1GB
8K
Memory Clock/
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
©2004 Micron Technology, Inc. All rights reserved
1Gb (128 Meg x 8)
2K (A0–A9, A11)
16K (A0–A13)
4 (BA0, BA1)
2 (S0#, S1#)
(CL-
(CL-
Clock Cycles
Clock Cycles
2GB
8K
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
2-2-2
2-3-3
3-3-3
3-3-3
2-2-2
RCD-
RCD-
Features
t
t
RP)
RP)