MT16VDDT12864AY-335F2 Micron Technology Inc, MT16VDDT12864AY-335F2 Datasheet - Page 27

• Manufacturer Part Number: MT16VDDT12864AY-335F2
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT12864AY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.44A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
SDA OUT
SELECT CODE
MODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 16: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
b7
1
0
t HD:DAT
DEVICE TYPE IDENTIFIER
BYTES
27
256MB, 512MB, 1GB, 2GB (x64, DR)
1
1
1
1
16
1
b6
0
1
t DH
INITIAL SEQUENCE
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
b5
1
1
t SU:DAT
b4
0
0
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0