MT16VDDT12864AY-335F2 Micron Technology Inc, MT16VDDT12864AY-335F2 Datasheet - Page 30

• Manufacturer Part Number: MT16VDDT12864AY-335F2
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT12864AY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.44A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 22: Serial Presence-Detect Matrix (256MB, 512MB, and 1GB) (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 31
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
BYTE
36-40 Reserved
46-61 Reserved
46-61 Reserved
65-71 Manufacturer’s JEDEC ID Code
73-90 Module Part Number (ASCII)
28
29
30
31
32
33
34
35
41
42
43
44
45
47
62
63
64
72
91
92
93
Minimum Row Active to Row Active,
t
Minimum Ras# to CAS# Delay,
(see note 4)
Minimum RAS# Pulse Width,
(see note 2)
Module Rank Density
Address and Command Setup Time,
t
Address and Command Hold Time,
t
Data/Data Mask Input Setup Time,
t
Data/Data Mask Input
Hold Time,
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/
Auto Refresh Command Period,
SDRAM Device Max Cycle Time,
t
SDRAM Device Max DQS-DQ Skew
Time,
SDRAM Device Max Read Data Hold
Skew Factor,
DIMM Height
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
RRD
IS, (see note 3)
IH, (see note 3)
DS
CK
MAX
t
DQSQ
DESCRIPTION
t
DH
t
QHS
t
RAS,
t
t
RCD
RC
t
RFC
1.0ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
Standard/Low-Profile
15ns (-262/-26A/-265)
45ns (-262/-26A/-265)
1.0ns (-262-26A/-265)
75ns (-262/-26A/-265)
13ns (-262/-26A/-265)
ENTRY (VERSION)
20ns (-26A/-265)
65ns (-26A/-265)
128MB, 256MB,
60ns (-335/-262)
0.45ns (-335)
0.45ns (-335)
0.45ns (-335)
0.55ns (-335)
(Continued)
0.8ns (-335)
0.8ns (-335)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
72ns (-335)
12ns (-335)
Release 1.0
MICRON
512MB
01–12
-26A
-335
-262
-265
0
30
256MB, 512MB, 1GB, 2GB (x64, DR)
MT16VDDT3264A MT16VDDT6464A MT16VDDT12864A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Variable Data
Variable Data
Variable Data
184-PIN DDR SDRAM UDIMM
01–0C
98/A8
C5/D5
01/11
05/15
F5/05
2A
2D
A0
A0
2D
30
3C
48
3C
50
20
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
00
10
2C
00
FF
Variable Data
Variable Data
Variable Data
01–0C
BB/CB
01/11
28/38
18/28
E8/F8
2A
2D
A0
A0
2D
30
3C
48
3C
50
40
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
00
10
2C
00
FF
©2004 Micron Technology, Inc.
Variable Data
Variable Data
Variable Data
01–0C
FC/0C
01/11
69/79
29/39
59/69
2A
2D
A0
A0
2D
30
3C
48
3C
50
80
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
00
10
2C
00
FF