MT16HTF12864HY-667B3 Micron Technology Inc, MT16HTF12864HY-667B3 Datasheet - Page 9

MODULE DDR2 1GB 200-SODIMM

MT16HTF12864HY-667B3

Manufacturer Part Number
MT16HTF12864HY-667B3
Description
MODULE DDR2 1GB 200-SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF12864HY-667B3

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
45ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.496A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DRAM Operating Conditions
Table 8: Module and Component Speed Grades
DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Module Speed Grade
-1GA
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron's Web site. Module speed grades cor-
relate with component speed grades.
-80E
-800
-667
-53E
-40E
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
DRAM Operating Conditions
-187E
-25E
-37E
-25
-5E
-3
© 2004 Micron Technology, Inc. All rights reserved.

Related parts for MT16HTF12864HY-667B3